摘要:
A method and apparatus are described that may be used to provide decoupled rotation of structures about different pivot points. The apparatus may include one or more fixed blades mounted to a frame or substrate, one or more movable blades mounted to each structure to be moved, and flexures on which the structures are suspended. Separate movable blades may be provided for each degree of freedom. When voltage is applied between the fixed and movable blades, the electrostatic attraction generates a force attracting movable blades toward blades that are fixed relative to the moveable blades, causing a structure to rotate about the flexures. The angle of rotation that results may be related to the size, number and spacing of the blades, the stiffness of the flexures and the magnitude of the voltage difference applied to the blades. The blades are fabricated using deep silicon etching.
摘要:
A method and apparatus are described that may be used to provide decoupled rotation of structures about different pivot points. The apparatus may include one or more fixed blades mounted to a frame or substrate, one or more movable blades mounted to each structure to be moved, and flexures on which the structures are suspended. Separate movable blades may be provided for each degree of freedom. When voltage is applied between the fixed and movable blades, the electrostatic attraction generates a force attracting movable blades toward blades that are fixed relative to the moveable blades, causing a structure to rotate about the flexures. The angle of rotation that results may be related to the size, number and spacing of the blades, the stiffness of the flexures and the magnitude of the voltage difference applied to the blades. The blades are fabricated using deep silicon etching.
摘要:
A method and apparatus are described that may be used to provide decoupled rotation of structures about different pivot points. The apparatus may include one or more fixed blades mounted to a frame or substrate, one or more movable blades mounted to each structure to be moved, and flexures on which the structures are suspended. Separate movable blades may be provided for each degree of freedom. When voltage is applied between the fixed and movable blades, the electrostatic attraction generates a force attracting movable blades toward blades that are fixed relative to the moveable blades, causing a structure to rotate about the flexures. The angle of rotation that results may be related to the size, number and spacing of the blades, the stiffness of the flexures and the magnitude of the voltage difference applied to the blades. The blades are fabricated using deep silicon etching.
摘要:
A method for fabricating semiconductor wafers as multiple-depth structure (i.e., having portions of varying height). The method includes patterning a first substrate and bonding a second substrate to the first. This process creates a subsurface patterned layer. Portions of the second substrate may then be etched, exposing the subsurface patterned layer for selective processing. For example, the layered structure may then be repeatedly etched to produce a multiple depth structure. Or, for example, exposed portions of the first substrate may have material added to them to create multiple-depth structures. This method of fabrication provides substantial advantages over previous methods.
摘要:
A hand-held, wand-type buried object detector includes a motion and position sensor that provides data about the sensor head of the buried object detector. An inertial measuring device including three accelerometers and three gyroscopes is one example of a motion and position sensor. The buried object detector includes a processor/communicator device that is capable of processing the data from the motion and position sensor and communicating feedback, based on the processing results, to the operator about the operation of the buried object detector. In one example, a personal digital assistant may be configured for use as a processor/communicator device of a buried object detector.
摘要:
A method and system to facilitate failure modes and effects analysis (FMEA) of one or more components of a system. The FMEA is indicated with the generation of an FMEA form. A graphical user interface provides a sequential order of completion for a number of steps. The steps are followed to generate graphical representations which are to be completed by an FMEA analyst and received by the graphical user interface to facilitate generating the FMEA form.
摘要:
A method and system to facilitate failure modes and effects analysis (FMEA) of one or more components of a system. The FMEA is indicated with the generation of an FMEA form. A graphical user interface provides a sequential order of completion for a number of steps. The steps are followed to generate graphical representations which are to be completed by an FMEA analyst and received by the graphical user interface to facilitate generating the FMEA form.
摘要:
The present invention comprises a method determining a corrective design for a system component exhibiting time-in-service reliability concerns. The method comprises the steps of establishing a plurality of remote customer databases for collecting service data for a system component, receiving at a centralized database during a predetermined period of time at least one parameter representative of a failure rate for the system component based at least in part on the service data and determining if the at least one parameter represents a system component defect. When the at least one parameter represents a system component defect, the method includes determining at least one failure mode of the system component based at least in part on the at least one received parameter and determining a corrective design for the system component based at least in part on the at least one failure mode.
摘要:
A micromechanical structure is described. A region of semiconductor material has a first surface, a second surface opposite to the first surface, and a lateral surface that surrounds the region of semiconductor material. Insulative material covers the first surface and the lateral surface of the region of semiconductor material to provide electrical isolation to the region of semiconductor material by forming a boundary. To form the micromechanical structure, a trench is etched in a semiconductor substrate to surround a region of the semiconductor substrate. A surface of the semiconductor substrate and the trench are oxidized to form a top oxide and a lateral oxide region. A backside of the semiconductor substrate is etched to expose a backside of the region of the semiconductor substrate and a portion of the lateral oxide.