Electrostatic actuator for microelectromechanical systems and methods of fabrication
    1.
    发明授权
    Electrostatic actuator for microelectromechanical systems and methods of fabrication 有权
    用于微机电系统的静电致动器和制造方法

    公开(公告)号:US07261826B2

    公开(公告)日:2007-08-28

    申请号:US10766087

    申请日:2004-01-27

    IPC分类号: C23F1/00 H01L21/00

    摘要: A method and apparatus are described that may be used to provide decoupled rotation of structures about different pivot points. The apparatus may include one or more fixed blades mounted to a frame or substrate, one or more movable blades mounted to each structure to be moved, and flexures on which the structures are suspended. Separate movable blades may be provided for each degree of freedom. When voltage is applied between the fixed and movable blades, the electrostatic attraction generates a force attracting movable blades toward blades that are fixed relative to the moveable blades, causing a structure to rotate about the flexures. The angle of rotation that results may be related to the size, number and spacing of the blades, the stiffness of the flexures and the magnitude of the voltage difference applied to the blades. The blades are fabricated using deep silicon etching.

    摘要翻译: 描述了可用于提供关于不同枢转点的结构的解耦旋转的方法和装置。 该装置可以包括安装到框架或基板的一个或多个固定刀片,安装到要移动的每个结构的一个或多个可动刀片以及悬挂结构的挠曲件。 可以为每个自由度设置单独的可动叶片。 当在固定刀片和可动刀片之间施加电压时,静电引力产生向可移动刀片固定的刀片吸引可动刀片的力,导致结构围绕弯曲部旋转。 导致的旋转角度可能与叶片的尺寸,数量和间距,弯曲刚度和施加到叶片的电压差的大小有关。 使用深硅蚀刻制造刀片。

    Electrostatic actuator for micromechanical systems
    2.
    发明授权
    Electrostatic actuator for micromechanical systems 有权
    用于微机械系统的静电执行器

    公开(公告)号:US06753638B2

    公开(公告)日:2004-06-22

    申请号:US09775491

    申请日:2001-02-02

    IPC分类号: G02B2610

    摘要: A method and apparatus are described that may be used to provide decoupled rotation of structures about different pivot points. The apparatus may include one or more fixed blades mounted to a frame or substrate, one or more movable blades mounted to each structure to be moved, and flexures on which the structures are suspended. Separate movable blades may be provided for each degree of freedom. When voltage is applied between the fixed and movable blades, the electrostatic attraction generates a force attracting movable blades toward blades that are fixed relative to the moveable blades, causing a structure to rotate about the flexures. The angle of rotation that results may be related to the size, number and spacing of the blades, the stiffness of the flexures and the magnitude of the voltage difference applied to the blades. The blades are fabricated using deep silicon etching.

    摘要翻译: 描述了可用于提供关于不同枢转点的结构的解耦旋转的方法和装置。 该装置可以包括安装到框架或基板的一个或多个固定刀片,安装到要移动的每个结构的一个或多个可动刀片以及悬挂结构的挠曲件。 可以为每个自由度设置单独的可动叶片。 当在固定刀片和可动刀片之间施加电压时,静电引力产生向可移动刀片固定的刀片吸引可动刀片的力,导致结构围绕弯曲部旋转。 导致的旋转角度可能与叶片的尺寸,数量和间距,弯曲刚度和施加到叶片的电压差的大小有关。 使用深硅蚀刻制造刀片。

    Method of fabricating semiconductor wafers having multiple height subsurface layers
    4.
    发明授权
    Method of fabricating semiconductor wafers having multiple height subsurface layers 有权
    制造具有多个高度地下层的半导体晶片的方法

    公开(公告)号:US06544863B1

    公开(公告)日:2003-04-08

    申请号:US09934783

    申请日:2001-08-21

    IPC分类号: H01L2146

    CPC分类号: B81C1/00619

    摘要: A method for fabricating semiconductor wafers as multiple-depth structure (i.e., having portions of varying height). The method includes patterning a first substrate and bonding a second substrate to the first. This process creates a subsurface patterned layer. Portions of the second substrate may then be etched, exposing the subsurface patterned layer for selective processing. For example, the layered structure may then be repeatedly etched to produce a multiple depth structure. Or, for example, exposed portions of the first substrate may have material added to them to create multiple-depth structures. This method of fabrication provides substantial advantages over previous methods.

    摘要翻译: 一种用于制造多深度结构(即具有不同高度的部分)的半导体晶片的方法。 该方法包括图案化第一衬底并将第二衬底接合到第一衬底。 该过程产生了地下图案层。 然后可以蚀刻第二衬底的部分,暴露出地下图案化层以进行选择性处理。 例如,可以重复地蚀刻层状结构以产生多个深度结构。 或者,例如,第一基板的暴露部分可以具有添加到其中的材料以产生多深度结构。 这种制造方法比以前的方法提供了显着的优点。

    Method to facilitate failure modes and effects analysis
    6.
    发明授权
    Method to facilitate failure modes and effects analysis 有权
    促进失效模式和影响分析的方法

    公开(公告)号:US07412632B2

    公开(公告)日:2008-08-12

    申请号:US10707186

    申请日:2003-11-25

    IPC分类号: G06F11/00

    CPC分类号: G06Q10/10 G05B2219/35227

    摘要: A method and system to facilitate failure modes and effects analysis (FMEA) of one or more components of a system. The FMEA is indicated with the generation of an FMEA form. A graphical user interface provides a sequential order of completion for a number of steps. The steps are followed to generate graphical representations which are to be completed by an FMEA analyst and received by the graphical user interface to facilitate generating the FMEA form.

    摘要翻译: 一种促进系统的一个或多个组件的故障模式和效果分析(FMEA)的方法和系统。 FMEA表示产生FMEA表格。 图形用户界面为多个步骤提供顺序的完成顺序。 按照步骤生成由FMEA分析人员完成并由图形用户界面接收以便于生成FMEA表单的图形表示。

    METHOD TO FACILITATE FAILURE MODES AND EFFECTS ANALYSIS
    7.
    发明申请
    METHOD TO FACILITATE FAILURE MODES AND EFFECTS ANALYSIS 有权
    促进失效模式和影响分析的方法

    公开(公告)号:US20050138477A1

    公开(公告)日:2005-06-23

    申请号:US10707186

    申请日:2003-11-25

    IPC分类号: G06F11/00

    CPC分类号: G06Q10/10 G05B2219/35227

    摘要: A method and system to facilitate failure modes and effects analysis (FMEA) of one or more components of a system. The FMEA is indicated with the generation of an FMEA form. A graphical user interface provides a sequential order of completion for a number of steps. The steps are followed to generate graphical representations which are to be completed by an FMEA analyst and received by the graphical user interface to facilitate generating the FMEA form.

    摘要翻译: 一种促进系统的一个或多个组件的故障模式和效果分析(FMEA)的方法和系统。 FMEA表示产生FMEA表格。 图形用户界面为多个步骤提供顺序的完成顺序。 按照步骤生成由FMEA分析人员完成并由图形用户界面接收以便于生成FMEA表单的图形表示。

    Method of time-in-service reliability concern resolution
    9.
    发明申请
    Method of time-in-service reliability concern resolution 有权
    服务时间可靠性解决方法

    公开(公告)号:US20050289380A1

    公开(公告)日:2005-12-29

    申请号:US10875131

    申请日:2004-06-23

    IPC分类号: G06F11/00

    摘要: The present invention comprises a method determining a corrective design for a system component exhibiting time-in-service reliability concerns. The method comprises the steps of establishing a plurality of remote customer databases for collecting service data for a system component, receiving at a centralized database during a predetermined period of time at least one parameter representative of a failure rate for the system component based at least in part on the service data and determining if the at least one parameter represents a system component defect. When the at least one parameter represents a system component defect, the method includes determining at least one failure mode of the system component based at least in part on the at least one received parameter and determining a corrective design for the system component based at least in part on the at least one failure mode.

    摘要翻译: 本发明包括确定显示服务时间可靠性问题的系统组件的校正设计的方法。 该方法包括以下步骤:建立多个用于收集系统组件的服务数据的远程客户数据库,在预定时间段期间在集中式数据库处接收至少一个代表系统组件的故障率的参数,所述参数至少基于 部分服务数据并确定至少一个参数是否表示系统组件缺陷。 当所述至少一个参数表示系统组件缺陷时,所述方法包括至少部分地基于所述至少一个接收到的参数来确定所述系统组件的至少一个故障模式,并且至少基于所述至少一个接收参数确定所述系统组件的校正设计 部分是至少一个故障模式。

    Boundary isolation for microelectromechanical devices
    10.
    发明授权
    Boundary isolation for microelectromechanical devices 有权
    微机电装置的边界隔离

    公开(公告)号:US07728339B1

    公开(公告)日:2010-06-01

    申请号:US10139009

    申请日:2002-05-03

    IPC分类号: H01L29/207 H01L21/00

    摘要: A micromechanical structure is described. A region of semiconductor material has a first surface, a second surface opposite to the first surface, and a lateral surface that surrounds the region of semiconductor material. Insulative material covers the first surface and the lateral surface of the region of semiconductor material to provide electrical isolation to the region of semiconductor material by forming a boundary. To form the micromechanical structure, a trench is etched in a semiconductor substrate to surround a region of the semiconductor substrate. A surface of the semiconductor substrate and the trench are oxidized to form a top oxide and a lateral oxide region. A backside of the semiconductor substrate is etched to expose a backside of the region of the semiconductor substrate and a portion of the lateral oxide.

    摘要翻译: 描述微机械结构。 半导体材料的区域具有第一表面,与第一表面相对的第二表面和围绕半导体材料区域的侧表面。 绝缘材料覆盖半导体材料区域的第一表面和侧表面,以通过形成边界来提供对半导体材料区域的电隔离。 为了形成微机械结构,在半导体衬底中蚀刻沟槽以包围半导体衬底的区域。 半导体衬底和沟槽的表面被氧化以形成顶部氧化物和横向氧化物区域。 蚀刻半导体衬底的背面以暴露半导体衬底的区域的背面和一部分横向氧化物。