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公开(公告)号：US07863964B2
公开(公告)日：2011-01-04
申请号：US11964886
申请日：2007-12-27
IPC分类号： H03K17/00
CPC分类号： H03K17/693 , H03K19/018557
摘要： A radio frequency semiconductor switching device (S) is formed on an MMIC structure (C) including a switching circuit element (12) having four semiconductor switching units (68, 70) with each adapted for receiving a gate control signal. A level shift circuit (10) generates a biasing voltage signal communicated of the switching units (68, 70) for biasing the switching units (68), and provides an output that swings between approximately one diode drop above ground and a negative voltage to bias the switching circuit elements (68 and 70) for reduced loss. The level shift circuit (10) is responsive to an externally provided control signal (58). The switching units (68, 70) are formed into a grouping of at least, a first and a second set (76, 78) of interconnected semiconductor switching units (68, 70) with each set (76, 78) having gates of at least two of the interconnected switching units (68, 70) connected with the level shift circuit output (60, 62). Both the switching units (68, 70) and the level shift circuit (10) are formed on the MMIC structure (C).
摘要翻译： 射频半导体开关器件（S）形成在包括具有四个半导体开关单元（68,70）的开关电路元件（12）的MMIC结构（C）上，每个半导体开关单元适于接收栅极控制信号。 电平移位电路（10）产生用于偏置开关单元（68）的开关单元（68,70）通信的偏置电压信号，并提供在地面上大约一个二极管压降与负电压之间摆动的输出，以偏置 开关电路元件（68和70）用于减少损耗。 电平移位电路（10）响应外部提供的控制信号（58）。 开关单元（68,70）形成为至少互连的半导体开关单元（68,70）的第一组和第二组（76,78）的分组，每组具有栅极的组（76,78） 与电平移位电路输出（60,62）连接的至少两个互连的开关单元（68,70）。 开关单元（68,70）和电平移位电路（10）均形成在MMIC结构（C）上。
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公开(公告)号：US20090167409A1
公开(公告)日：2009-07-02
申请号：US11964886
申请日：2007-12-27
IPC分类号： H03K17/687
CPC分类号： H03K17/693 , H03K19/018557
摘要： A radio frequency semiconductor switching device (S) is formed on an MMIC structure (C) including a switching circuit element (12) having four semiconductor switching units (68, 70) with each adapted for receiving a gate control signal. A level shift circuit (10) generates a biasing voltage signal communicated of the switching units (68, 70) for biasing the switching units (68), and provides an output that swings between approximately one diode drop above ground and a negative voltage to bias the switching circuit elements (68 and 70) for reduced loss. The level shift circuit (10) is responsive to an externally provided control signal (58). The switching units (68, 70) are formed into a grouping of at least, a first and a second set (76, 78) of interconnected semiconductor switching units (68, 70) with each set (76, 78) having gates of at least two of the interconnected switching units (68, 70) connected with the level shift circuit output (60, 62). Both the switching units (68, 70) and the level shift circuit (10) are formed on the MMIC structure (C).
摘要翻译： 射频半导体开关器件（S）形成在包括具有四个半导体开关单元（68,70）的开关电路元件（12）的MMIC结构（C）上，每个半导体开关单元适于接收栅极控制信号。 电平移位电路（10）产生用于偏置开关单元（68）的开关单元（68,70）通信的偏置电压信号，并提供在地面上大约一个二极管压降与负电压之间摆动的输出，以偏置 开关电路元件（68和70）用于减少损耗。 电平移位电路（10）响应外部提供的控制信号（58）。 开关单元（68,70）形成为至少互连的半导体开关单元（68,70）的第一组和第二组（76,78）的分组，每组具有栅极的组（76,78） 与电平移位电路输出（60,62）连接的至少两个互连的开关单元（68,70）。 开关单元（68,70）和电平移位电路（10）均形成在MMIC结构（C）上。
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