公开(公告)号：US20160197136A1

公开(公告)日：2016-07-07

申请号：US14967956

申请日：2015-12-14

申请人： Se Hoon Oh ,  Seongyul Park ,  Chin Moo Cho ,  Yunjung Choi ,  Gyu-Hee Park ,  Youn-Joung Cho ,  Younsoo Kim ,  Jae Hyoung Choi

发明人： Se Hoon Oh ,  Seongyul Park ,  Chin Moo Cho ,  Yunjung Choi ,  Gyu-Hee Park ,  Youn-Joung Cho ,  Younsoo Kim ,  Jae Hyoung Choi

IPC分类号： H01L49/02 ,  H01L21/322 ,  H01L21/285

CPC分类号： H01L28/65 ,  H01L21/322 ,  H01L28/75

摘要： The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.

摘要翻译： 本发明构思提供了半导体器件及其制造方法，其中该方法包括形成电容器，该电容器包括依次层叠在基板上的底部电极，电介质层和顶部电极，并且上部电极的形成包括形成第一 金属氮化物层，并且在第一金属氮化物层上形成第二金属氮化物层，其中第一金属氮化物层设置在电介质层和第二金属氮化物层之间，并且形成第一金属氮化物层 在比形成第二金属氮化物层的温度低的温度下进行。