-
公开(公告)号:US20130313012A1
公开(公告)日:2013-11-28
申请号:US13477586
申请日:2012-05-22
CPC分类号: H01L21/6835 , H01L21/4857 , H01L21/486 , H01L23/49822 , H01L23/49827 , H01L2221/68345 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/16237 , H01L2924/014 , Y10T29/49126 , Y10T29/4913 , Y10T29/49165 , Y10T29/49208 , Y10T29/49213
摘要: A method for forming an interconnection element having metalized structures includes forming metalized structures in an in-process unit that has a support material layer with first and second spaced-apart surfaces defining a thickness therebetween, a handling structure, and an insulating layer separating at least portions of the first surface of the support material layer from at least portions of the handling structure. The metalized structures are formed extending through the thickness of the support material layer. The method also includes etching at least a portion of the insulating layer to remove the handling structure from the in-process unit and further processing the in-process unit to form the interconnection element.
摘要翻译: 一种用于形成具有金属化结构的互连元件的方法包括在处理单元中形成金属化结构,所述处理单元具有支撑材料层,所述支撑材料层具有在其间限定厚度的第一和第二间隔开的表面,处理结构和绝缘层, 支撑材料层的第一表面的部分从处理结构的至少一部分。 金属化结构形成为延伸穿过支撑材料层的厚度。 该方法还包括蚀刻绝缘层的至少一部分以从处理单元去除处理结构,并进一步处理在处理单元以形成互连元件。
-
公开(公告)号:US08978247B2
公开(公告)日:2015-03-17
申请号:US13477586
申请日:2012-05-22
IPC分类号: H01K3/10 , H01L21/48 , H01L21/683 , H01L23/498
CPC分类号: H01L21/6835 , H01L21/4857 , H01L21/486 , H01L23/49822 , H01L23/49827 , H01L2221/68345 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/16237 , H01L2924/014 , Y10T29/49126 , Y10T29/4913 , Y10T29/49165 , Y10T29/49208 , Y10T29/49213
摘要: A method for forming an interconnection element having metalized structures includes forming metalized structures in an in-process unit that has a support material layer with first and second spaced-apart surfaces defining a thickness therebetween, a handling structure, and an insulating layer separating at least portions of the first surface of the support material layer from at least portions of the handling structure. The metalized structures are formed extending through the thickness of the support material layer. The method also includes etching at least a portion of the insulating layer to remove the handling structure from the in-process unit and further processing the in-process unit to form the interconnection element.
摘要翻译: 一种用于形成具有金属化结构的互连元件的方法包括在处理单元中形成金属化结构,所述处理单元具有支撑材料层,所述支撑材料层具有在其间限定厚度的第一和第二间隔开的表面,处理结构和绝缘层, 支撑材料层的第一表面的部分从处理结构的至少一部分。 金属化结构形成为延伸穿过支撑材料层的厚度。 该方法还包括蚀刻绝缘层的至少一部分以从处理单元去除处理结构,并进一步处理在处理单元以形成互连元件。
-