公开(公告)号：US20150036246A1

公开(公告)日：2015-02-05

申请号：US13953936

申请日：2013-07-30

Applicant: Seagate Technology LLC

Inventor： Kevin McNeill ,  Aiden Goggin ,  Marcus Ormston ,  Victor Boris Sapozhnikov

IPC: G11B5/11

CPC classification number: G11B5/11 ,  G11B5/3929 ,  G11B5/398 ,  H01L43/02 ,  H01L43/08 ,  Y10T428/1193

Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for a region of reduced anisotropy within a synthetic antiferromagnetic (SAF) shield. The SAF shield includes first and second layers of ferromagnetic material separated by a coupling spacer layer. A distance between the first and second layers of ferromagnetic material is greater in a region proximal to the sensor stack than in a region away from the sensor stack.

Abstract translation: 通过在合成的反铁磁（SAF）屏蔽内提供减小各向异性的区域，可以改善由磁阻（MR）传感器检测到的信号。 SAF屏蔽包括由耦合间隔层隔开的第一和第二层铁磁材料层。 铁氧体材料的第一和第二层之间的距离在靠近传感器堆叠的区域中大于远离传感器堆叠的区域。