Temperature Tracking to Manage Threshold Voltages in a Memory
    1.
    发明申请
    Temperature Tracking to Manage Threshold Voltages in a Memory 有权
    温度跟踪来管理内存中的阈值电压

    公开(公告)号:US20150310938A1

    公开(公告)日:2015-10-29

    申请号:US14261560

    申请日:2014-04-25

    Abstract: Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with various embodiments, a first data access operation is conducted on a memory cell and a first temperature associated with the memory cell and associated with the first data access operation is measured. A second temperature associated with the memory cell is measured. At least one operational parameter is adjusted responsive to the first and second temperatures associated with the memory cell. A second data access operation is conducted on the memory cell using the adjusted operational parameter.

    Abstract translation: 用于管理诸如闪存阵列的存储器中的数据的方法和装置。 根据各种实施例,对存储器单元执行第一数据访问操作,并且测量与存储器单元相关联并与第一数据访问操作相关联的第一温度。 测量与存储器单元相关联的第二温度。 响应于与存储器单元相关联的第一和第二温度来调整至少一个操作参数。 使用经调整的操作参数对存储器单元进行第二数据访问操作。

    Temperature tracking to manage threshold voltages in a memory
    2.
    发明授权
    Temperature tracking to manage threshold voltages in a memory 有权
    温度跟踪来管理存储器中的阈值电压

    公开(公告)号:US09330790B2

    公开(公告)日:2016-05-03

    申请号:US14261560

    申请日:2014-04-25

    Abstract: Method and apparatus for managing data in a memory, such as a flash memory array. In accordance with various embodiments, a first data access operation is conducted on a memory cell and a first temperature associated with the memory cell and associated with the first data access operation is measured. A second temperature associated with the memory cell is measured. At least one operational parameter is adjusted responsive to the first and second temperatures associated with the memory cell. A second data access operation is conducted on the memory cell using the adjusted operational parameter.

    Abstract translation: 用于管理诸如闪存阵列的存储器中的数据的方法和装置。 根据各种实施例,对存储器单元执行第一数据访问操作,并且测量与存储器单元相关联并与第一数据访问操作相关联的第一温度。 测量与存储器单元相关联的第二温度。 响应于与存储器单元相关联的第一和第二温度来调整至少一个操作参数。 使用经调整的操作参数对存储器单元进行第二数据访问操作。

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