公开(公告)号：US20190112722A1

公开(公告)日：2019-04-18

申请号：US15785698

申请日：2017-10-17

Applicant: Seagate Technology LLC

Inventor： Jie Gong ,  Steven C. Riemer ,  John A. Rice ,  Hilton Erskine ,  Michael C. Kautzky

IPC: C25D5/18 ,  H01F1/147 ,  G11B5/706 ,  C25D7/00 ,  C25D7/12 ,  C25D3/56 ,  C22C30/00

Abstract: A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a high damping magnetic alloy with very low impurity and small uniform grain size. The method also includes applying a pulsed current with a certain range of duty cycle and pulse length to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the high damping magnetic alloy is formed on the wafer.

公开(公告)号：US11913130B1

公开(公告)日：2024-02-27

申请号：US17830695

申请日：2022-06-02

Applicant: Seagate Technology LLC

Inventor： Jie Gong ,  Steven C. Riemer ,  John A. Rice ,  Hilton Erskine ,  Michael C. Kautzky ,  Xuelian Xu

IPC: G11B5/187 ,  C25D3/56 ,  C25D5/18

CPC classification number: C25D3/562 ,  C25D5/18 ,  G11B5/187

Abstract: A data storage device comprising a recording head having a high damping magnetic alloy layer including at least one magnetic alloy element, and a 5d transition element; the high damping magnetic alloy layer having a mixed face-centered cubic (fcc) and body-centered cubic (bcc) crystal structure, and the mixed fcc and bcc crystal structure comprising fcc and bcc grains, with the bcc grains having an elongated shape relative to the fcc grains, a larger size than the fcc grains, and slip deformation, thereby providing the high damping magnetic alloy layer with a damping constant of up to about 0.07.

公开(公告)号：US11377749B1

公开(公告)日：2022-07-05

申请号：US16705991

申请日：2019-12-06

Applicant: Seagate Technology LLC

Inventor： Jie Gong ,  Steven C. Riemer ,  John A. Rice ,  Hilton Erskine ,  Michael C. Kautzky ,  Xuelian Xu

IPC: C25D3/56 ,  G11B5/187 ,  C25D5/18

Abstract: A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a high damping magnetic alloy with very low impurity and small uniform grain size. The method also includes applying a pulsed current with a certain range of duty cycle and pulse length to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the high damping magnetic alloy is formed on the wafer.