公开(公告)号：US09355679B1

公开(公告)日：2016-05-31

申请号：US14076155

申请日：2013-11-08

Applicant: Seagate Technology LLC

Inventor： Huaan Zhang ,  Barmeshwar Vikramaditya

IPC: G11B5/09 ,  G11B20/10 ,  G11B27/36 ,  G11B19/04 ,  G11B5/596

CPC classification number: G11B19/045 ,  G11B5/012 ,  G11B5/59627 ,  G11B19/041 ,  G11B20/10009 ,  G11B20/10194 ,  G11B20/10212 ,  G11B20/10222 ,  G11B20/1024 ,  G11B20/10481 ,  G11B27/36

Abstract: The disclosure is related to apparatuses and methods for characterizing and compensating for curvature in a write field generated by a data storage device transducer. In some embodiments, the curvature of a write field generated by a data storage device transducer may be characterized. Some embodiments can include a circuit to apply a phase compensation value based on a deterministic phase offset value, which may correspond with the write field curvature characterization.

Abstract translation: 本公开涉及用于表征和补偿由数据存储装置换能器产生的写入场中的曲率的装置和方法。 在一些实施例中，可以表征由数据存储设备换能器产生的写入场的曲率。 一些实施例可以包括用于基于可能对应于写入场曲率表征的确定性相位偏移值来施加相位补偿值的电路。