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    MAGNETORESISTIVE SENSOR FABRICATION
    1.
    发明申请
    MAGNETORESISTIVE SENSOR FABRICATION 审中-公开
    磁传感器制造

    公开(公告)号：US20160365104A1

    公开(公告)日：2016-12-15

    申请号：US14740116

    申请日：2015-06-15

    Applicant: Seagate Technology LLC

    Inventor： Zhiguo Ge ,  Shaun E. McKinlay ,  Eric W. Singleton ,  LiWen Tan ,  Jae Young Yi

    IPC: G11B5/39

    CPC classification number: G11B5/3912 ,  G11B5/397 ,  G11B5/3974 ,  G11B5/398

    Abstract: Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

    Abstract translation: 本文描述和要求保护的实施方案包括读取器结构，包括第一读取器，包括传感器堆叠和顶部屏蔽结构，顶部屏蔽结构包括合成反铁磁屏蔽（SAF）结构，其包括至少包括一层NiFe 和杂质添加剂，RKKY耦合层RKKY耦合层（例如，Ru层）和钉扎层。 在另一实施方案中，第一读取器的SAF屏蔽结构的RL至少包括一层非晶磁性材料。 然而，在另一实施方式中，SAF屏蔽结构包括在SAF屏蔽RL之下，SAF屏蔽RL内或SAF屏蔽RL和SAF屏蔽Ru之间的非晶磁性材料的插入层。

    MAGNETORESISTIVE SENSOR FABRICATION
    3.
    发明申请
    MAGNETORESISTIVE SENSOR FABRICATION 审中-公开

    公开(公告)号：US20170294199A1

    公开(公告)日：2017-10-12

    申请号：US15631372

    申请日：2017-06-23

    Applicant: Seagate Technology LLC

    Inventor： Zhiguo Ge ,  Shaun E. McKinlay ,  Eric W. Singleton ,  LiWen Tan ,  Jae Young Yi

    IPC: G11B5/39

    CPC classification number: G11B5/3912 ,  G11B5/397 ,  G11B5/3974 ,  G11B5/398

    Abstract: Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

    Magnetoresistive sensor fabrication
    4.
    发明授权
    Magnetoresistive sensor fabrication 有权

    公开(公告)号：US10090008B2

    公开(公告)日：2018-10-02

    申请号：US15631372

    申请日：2017-06-23

    Applicant: Seagate Technology LLC

    Inventor： Zhiguo Ge ,  Shaun E. McKinlay ,  Eric W. Singleton ,  LiWen Tan ,  Jae Young Yi

    IPC: G11B5/39

    Abstract: Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

    SENSOR STABILIZATION IN A MULTIPLE SENSOR MAGNETIC REPRODUCING DEVICE
    7.
    发明申请
    SENSOR STABILIZATION IN A MULTIPLE SENSOR MAGNETIC REPRODUCING DEVICE 有权
    多传感器磁传播装置中的传感器稳定性

    公开(公告)号：US20170011759A1

    公开(公告)日：2017-01-12

    申请号：US14793988

    申请日：2015-07-08

    Applicant: Seagate Technology LLC

    Inventor： Zhiguo Ge ,  Shaun E. McKinlay ,  Eric W. Singleton ,  LiWen Tan ,  Jae Young Yi

    IPC: G11B5/39 ,  G11B5/127

    CPC classification number: G11B5/3932 ,  G11B5/115 ,  G11B5/1272 ,  G11B5/3912 ,  G11B5/3954 ,  G11B5/3974

    Abstract: A multi-sensor reader that includes a first sensor that has a sensing layer with a magnetization that changes according to an external magnetic field. The first sensor also includes first and second side biasing magnets having a magnetization substantially along a first direction. The first and second side biasing magnets align the magnetization of the sensing layer substantially along the first direction when the sensing layer is not substantially influenced by the external magnetic field. The multi-sensor reader further includes a second sensor that is stacked over the first sensor. The second sensor includes a reference layer that has a magnetization that is set substantially along a second direction. The first sensor further includes at least one sensor-stabilization feature that counteracts an influence of a magnetic field utilized to set the magnetization of the reference layer of the second sensor in the second direction on the magnetization of at least one of the first and second side biasing magnets in the first direction.

    Abstract translation: 一种多传感器读取器，其包括具有根据外部磁场而变化的磁化的感测层的第一传感器。 第一传感器还包括具有基本沿着第一方向的磁化的第一和第二侧偏置磁体。 当感测层基本上不受外部磁场的影响时，第一和第二侧偏置磁体基本上沿着第一方向对准感测层的磁化。 多传感器读取器还包括堆叠在第一传感器上的第二传感器。 第二传感器包括具有基本沿第二方向设定的磁化的参考层。 第一传感器还包括至少一个传感器稳定特征，其抵消用于将第二传感器的参考层的磁化在第二方向上的磁场的影响抵抗第一和第二侧中的至少一个的磁化 沿第一方向偏压磁铁。

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