公开(公告)号：US11909337B2

公开(公告)日：2024-02-20

申请号：US17264845

申请日：2019-07-10

申请人： Seiki Chiba ,  Mikio Waki ,  ZEON CORPORATION

发明人： Seiki Chiba ,  Mikio Waki ,  Makoto Takeshita ,  Mitsugu Uejima

IPC分类号： H02N2/18 ,  H01L41/113 ,  H10N30/30

CPC分类号： H02N2/181 ,  H10N30/30

摘要： A dielectric elastomer power generation system A1 includes a dielectric elastomer power generation element 3 having a dielectric elastomer layer 31 and a pair of electrode layers 32 sandwiching the dielectric elastomer layer 31. The dielectric elastomer power generation system A1 further includes a piezoelectric element 1 and a multi-stage voltage multiplier/rectifier circuit 2 that boosts and rectifies the voltage generated by the piezoelectric element 1 and applies the resulting voltage as an initial voltage to the dielectric elastomer power generation element 3. This configuration enables the system to be constructed at a lower cost and increase the amount of power generation.

公开(公告)号：US11904358B2

公开(公告)日：2024-02-20

申请号：US17596762

申请日：2020-06-17

申请人： Seiki Chiba ,  Mikio Waki ,  ZEON CORPORATION

发明人： Seiki Chiba ,  Mikio Waki ,  Mitsugu Uejima ,  Makoto Takeshita

IPC分类号： B06B1/02

CPC分类号： B06B1/0292

摘要： A dielectric elastomer transducer according to the present invention includes a dielectric elastomer layer, and a pair of electrode layers sandwiching the dielectric elastomer layer. The electrode layers contain a binder and carbon black. The carbon black has a particle size distribution as measured by dynamic light scattering in which not less than 95% falls in a range of 0.15 to 8.0 μm. The carbon black has a particle size as measured by laser scattering ranging from 0.4 to 50 μm. The particle size distribution of the carbon black as measured by dynamic light scattering has a first peak that falls in a first range of 0.15 to 1.0 μm and a second peak that falls in a second range of 1.0 μm to 8.0 μm. This structure achieves both stretchability and electrical conductivity of the electrode layers.

公开(公告)号：US11584831B2

公开(公告)日：2023-02-21

申请号：US16335815

申请日：2017-09-28

申请人： ZEON CORPORATION

发明人： Yoshihisa Takeyama ,  Makoto Takeshita

IPC分类号： C08J3/205 ,  C08K3/04 ,  C08K7/06 ,  C08J3/02 ,  C08L101/00

摘要： Provided is a method of producing a slurry that enables simple production of a slurry in which fibrous carbon nanostructures are favorably dispersed. The method of producing a slurry includes: a mixing step of mixing resin particles having an average particle diameter of at least 1 μm and not more than 700 μm, fibrous carbon nanostructures, and a dispersion medium to obtain a mixed liquid; and a dispersing step of subjecting the mixed liquid to dispersion treatment using a wet medialess disperser under conditions in which pressure acting on the mixed liquid (gauge pressure) is 5 MPa or less to obtain a slurry. The fibrous carbon nanostructures preferably include carbon nanotubes.

公开(公告)号：US10446690B2

公开(公告)日：2019-10-15

申请号：US15039335

申请日：2014-11-25

申请人： TOHOKU UNIVERSITY ,  ZEON CORPORATION

发明人： Tetsuya Goto ,  Makoto Takeshita

IPC分类号： H01L29/786 ,  C08F2/06 ,  H01L21/02 ,  H01L29/66 ,  C08F283/14 ,  C08L65/00 ,  C08G61/02 ,  H01L23/29 ,  H01L23/31 ,  C08K5/5425 ,  C08L33/08 ,  C08F220/10

摘要： A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

公开(公告)号：US20170186874A1

公开(公告)日：2017-06-29

申请号：US15039335

申请日：2014-11-25

申请人： TOHOKU UNIVERSITY ,  ZEON CORPORATION

发明人： Tetsuya Goto ,  Makoto Takeshita

IPC分类号： H01L29/786 ,  H01L23/29 ,  C08L65/00 ,  H01L29/66 ,  C08G61/02 ,  H01L21/02 ,  H01L23/31

摘要： A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.