公开(公告)号：US20140060738A1

公开(公告)日：2014-03-06

申请号：US14012213

申请日：2013-08-28

Applicant: Semes Co., Ltd.

Inventor： Hyung Joon KIM ,  Jae Min ROH

IPC: H01J37/02

CPC classification number: H01J37/02 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32477 ,  H01J37/32495

Abstract: Provided is a substrate treating apparatus using plasma. A substrate treating apparatus includes a chamber having a treating space therein, a support member disposed in the chamber to support the substrate, a gas supply unit supplying a gas into the chamber, and a plasma source disposed on an upper portion of the camber, the plasma source including an antenna generating plasma from the gas supplied into the chamber, wherein the chamber includes a housing having an opened top surface, the housing having a treating space therein, and a dielectric substance assembly covering the opened top surface of the housing, and wherein the dielectric substance assembly includes a dielectric substance window and a reinforcement film having strength greater than that of the dielectric substance window.

Abstract translation: 提供了使用等离子体的基板处理装置。 基板处理装置包括其中具有处理空间的室，设置在室中以支撑基板的支撑构件，将气体供应到室中的气体供应单元和设置在外倾角上部的等离子体源， 等离子体源包括从供应到所述室中的气体产生等离子体的天线，其中所述室包括具有敞开的顶表面的壳体，所述壳体中具有处理空间，以及覆盖所述壳体的敞开的顶表面的介电物质组件，以及 其中所述介电物质组件包括电介质窗口和强度大于所述电介质窗口的强度的增强膜。