公开(公告)号：US11251263B2

公开(公告)日：2022-02-15

申请号：US16515243

申请日：2019-07-18

Applicant: Semiconductor Components Industries, LLC

Inventor： Moshe Agam ,  Jaroslav Pjencák ,  Johan Camiel Julia Janssens

IPC: H01L29/04 ,  H01L27/06 ,  H01L29/861 ,  H01L29/8605 ,  H01L29/78 ,  H01L27/01 ,  H01L29/73 ,  H01L29/739

Abstract: An electronic device can include a substrate defining a trench. In an embodiment, a semiconductor body can be within the trench, wherein the semiconductor body has a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate. In an embodiment, an electronic component can be within the semiconductor body. The electronic component can be a resistor or a diode. In a particular embodiment, the semiconductor body has an upper surface, the electronic component is within and along an upper surface and spaced apart from a bottom of the semiconductor body. In a further embodiment, the electronic device can further include a first electronic component within an active region of the substrate, an isolation structure within the trench, and a second electronic component within the isolation structure.

公开(公告)号：US20200295126A1

公开(公告)日：2020-09-17

申请号：US16515243

申请日：2019-07-18

Applicant: Semiconductor Components Industries, LLC

Inventor： Moshe Agam ,  Jaroslav Pjencák ,  Johan Camiel Julia Janssens

IPC: H01L29/04 ,  H01L29/861 ,  H01L29/8605 ,  H01L29/78 ,  H01L29/739 ,  H01L29/73 ,  H01L27/06 ,  H01L27/01

Abstract: An electronic device can include a substrate defining a trench. In an embodiment, a semiconductor body can be within the trench, wherein the semiconductor body has a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate. In an embodiment, an electronic component can be within the semiconductor body. The electronic component can be a resistor or a diode. In a particular embodiment, the semiconductor body has an upper surface, the electronic component is within and along an upper surface and spaced apart from a bottom of the semiconductor body. In a further embodiment, the electronic device can further include a first electronic component within an active region of the substrate, an isolation structure within the trench, and a second electronic component within the isolation structure.

公开(公告)号：US20190088554A1

公开(公告)日：2019-03-21

申请号：US16180819

申请日：2018-11-05

Applicant: Semiconductor Components Industries, LLC

Inventor： Moshe AGAM ,  Ladislav Seliga ,  Thierry Coffi Herve Yao ,  Jaroslav Pjencák ,  Gary H. Loechelt

IPC: H01L21/8238 ,  H01L29/417 ,  H01L29/66 ,  H01L21/761 ,  H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/10 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/51

Abstract: An electronic device can include a semiconductor layer having a primary surface, a drift region adjacent to the primary surface, a drain region adjacent to the drift region and extending deeper into the semiconductor layer as compared to the drift region, a resurf region spaced apart from the primary surface, an insulating layer overlying the drain region, and a contact extending through the insulating layer to the drain region. In an embodiment, the drain region can include a sinker region that allows a bulk breakdown to the resurf region to occur during an overvoltage event where the bulk breakdown occurs outside of the drift region, and in a particular embodiment, away from a shallow trench isolation structure or other sensitive structure.