公开(公告)号：US20160308136A1

公开(公告)日：2016-10-20

申请号：US15198244

申请日：2016-06-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kaori OGITA ,  Hiromi NOWATARI ,  Harue OSAKA ,  Takahiro USHIKUBO ,  Satoshi SEO ,  Takako TAKASU

IPC: H01L51/00

CPC classification number: H01L51/0052 ,  C07F15/0033 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1092 ,  H01L51/0058 ,  H01L51/0072 ,  H01L51/0085 ,  H05B33/14

Abstract: A composite material which includes an organic compound and an inorganic compound and has a high carrier-transport property is provided. A composite material having a good property of carrier injection into an organic compound is provided. A composite material in which light absorption due to charge-transfer interaction is unlikely to occur is provided. A composite material having a high visible-light-transmitting property is provided. A composite material including a hydrocarbon compound and an inorganic compound exhibiting an electron-accepting property with respect to the hydrocarbon compound is provided. The hydrocarbon compound has a substituent bonded to a naphthalene skeleton, a phenanthrene skeleton, or a triphenylene skeleton and has a molecular weight of 350 to 2000, and the substituent has one or more rings selected from a benzene ring, a naphthalene ring, a phenanthrene ring, and a triphenylene ring.

Abstract translation: 提供了包含有机化合物和无机化合物并具有高载流子传输性能的复合材料。 提供具有良好载体注入有机化合物性质的复合材料。 提供了由于电荷转移相互作用而导致的光吸收不可能发生的复合材料。 提供具有高可见光透射特性的复合材料。 提供了包含相对于烃化合物显示电子接受性的烃化合物和无机化合物的复合材料。 烃化合物具有与萘骨架，菲骨架或三亚苯骨架结合的取代基，分子量为350〜2000，该取代基具有一个以上选自苯环，萘环，菲 环和三亚苯环。

公开(公告)号：US20180301650A1

公开(公告)日：2018-10-18

申请号：US16006024

申请日：2018-06-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Takahiro USHIKUBO ,  Tetsuo TSUTSUI

IPC: H01L51/50 ,  H01L51/52

Abstract: An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≤m≤n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.

公开(公告)号：US20150221875A1

公开(公告)日：2015-08-06

申请号：US14685786

申请日：2015-04-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Harue OSAKA ,  Takako TAKASU ,  Hiroshi KADOMA ,  Yuko KAWATA ,  Satoko SHITAGAKI ,  Hiromi NOWATARI ,  Tsunenori SUZUKI ,  Nobuharu OHSAWA ,  Satoshi SEO

IPC: H01L51/00

CPC classification number: H01L51/0072 ,  C07D209/86 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1029 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/5004 ,  H01L51/5012 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/5088 ,  H01L2251/303 ,  H01L2251/5376 ,  H01L2251/552 ,  Y10S428/917

Abstract: A novel substance with which an increase in life and emission efficiency of a light-emitting element can be achieved is provided. A carbazole compound having a structure represented by General Formula (G1) is provided. Note that a substituent which makes the HOMO level and the LUMO level of a compound in which a bond of the substituent is substituted with hydrogen deep and shallow, respectively is used as each of substituents in General Formula (G1) (R1, R2, Ar3, and α3). Further, a substituent which makes the band gap (Bg) and the T1 level of a compound in which a bond of the substituent is substituted with hydrogen wide and high is used as each of the substituents in General Formula (G1) (R1, R2, Ar3, and α3).

Abstract translation: 提供了可以实现发光元件的寿命和发光效率的新型物质。 提供具有由通式（G1）表示的结构的咔唑化合物。 另外，作为通式（G1）（R1，R2，Ar3）中的各取代基，分别使用使氢取代基的氢原子被氢取代的化合物的HOMO能级和LUMO能级的取代基 ，和α3）。 另外，作为通式（G1）中的各取代基，使用通式（G1）的各取代基（R1，R2，R2），使带隙（Bg）的取代基和取代基的氢原子被氢原子高取代的化合物的T1电平 ，Ar3和α3）。

公开(公告)号：US20210143354A1

公开(公告)日：2021-05-13

申请号：US17153985

申请日：2021-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Takahiro USHIKUBO ,  Tetsuo TSUTSUI

IPC: H01L51/50 ,  B82Y10/00 ,  H01L51/52

Abstract: An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≤m≤n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.

公开(公告)号：US20170288153A1

公开(公告)日：2017-10-05

申请号：US15623799

申请日：2017-06-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi SEO ,  Harue OSAKA ,  Sachiko KAWAKAMI ,  Nobuharu OHSAWA ,  Tsunenori SUZUKI ,  Hiromi NOWATARI ,  Hiroki SUZUKI ,  Kyoko TAKEDA

IPC: H01L51/00

CPC classification number: H01L51/0074 ,  C07D405/04 ,  C07D405/14 ,  C07D409/04 ,  C07D409/14 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/0085 ,  H01L51/5012 ,  H01L51/5056

Abstract: An object is to provide a light-emitting element with high emission efficiency which includes a novel carbazole derivative that has a wide energy gap and can be used for a transport layer or a host material in a light-emitting element. A carbazole derivative in which the 4-position of dibenzothiophene or dibenzofuran is bonded to the 2- or 3-position of carbazole has been able to be provided by use of the carbazole derivative. Further, a light-emitting element having high emission efficiency has been able to be provided by use of the carbazole derivative.

公开(公告)号：US20130306949A1

公开(公告)日：2013-11-21

申请号：US13951028

申请日：2013-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Takahiro USHIKUBO ,  Tetsuo TSUTSUI

IPC: H01L51/50

CPC classification number: H01L51/504 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5004 ,  H01L51/5044 ,  H01L51/5278

Abstract: An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≦m≦n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.

Abstract translation: 本发明的目的是提供即使在低电压下能够以高亮度发光并且寿命长的发光元件。 发光元件在阳极和阴极之间包括n个EL层（n为2以上的自然数），并且还包括在阳极的第m层和第（m + 1）层之间的EL层 （m是自然数，m @ n-1），包括与第m层EL层相接触的第一施主材料的第一层，包含电子传输材料的第二层和接触的第二施主材料 与第一层和第三层包括与第二层和第（m + 1）层相接触的空穴传输材料和受主材料。

公开(公告)号：US20190386236A1

公开(公告)日：2019-12-19

申请号：US16558209

申请日：2019-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Tetsuo TSUTSUI

IPC: H01L51/50 ,  H01L51/00

Abstract: Light-emitting elements in which an increase of driving voltage can be suppressed are provided. Light-emitting devices whose power consumption is reduced by including such light-emitting elements are also provided. In a light-emitting element having an EL layer between an anode and a cathode, a first layer in which carriers can be produced is formed between the cathode and the EL layer and in contact with the cathode, a second layer which transfers electrons produced in the first layer is formed in contact with the first layer, and a third layer which injects the electrons received from the second layer into the EL layer is formed in contact with the second layer.

公开(公告)号：US20190074450A1

公开(公告)日：2019-03-07

申请号：US16169108

申请日：2018-10-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Harue OSAKA ,  Takako TAKASU ,  Hiroshi KADOMA ,  Yuko KAWATA ,  Satoko SHITAGAKI ,  Hiromi NOWATARI ,  Tsunenori SUZUKI ,  Nobuharu OHSAWA ,  Satoshi SEO

IPC: H01L51/00 ,  H01L51/50 ,  C09K11/06 ,  C07D209/86

Abstract: A novel substance with which an increase in life and emission efficiency of a light-emitting element can be achieved is provided. A carbazole compound having a structure represented by General Formula (G1) is provided. Note that a substituent which makes the HOMO level and the LUMO level of a compound in which a bond of the substituent is substituted with hydrogen deep and shallow, respectively is used as each of substituents in General Formula (G1) (R1, R2, Ar3, and α3). Further, a subsistent which makes the band gap (Bg) and the T1 level of a compound in which a bond of the substituent is substituted with hydrogen wide and high is used as each of the substituents in General Formula (G1) (R1, R2, Ar3, and α3).

公开(公告)号：US20160240808A1

公开(公告)日：2016-08-18

申请号：US15138565

申请日：2016-04-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Takahiro USHIKUBO ,  Tetsuo TSUTSUI

IPC: H01L51/50

CPC classification number: H01L51/504 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5004 ,  H01L51/5044 ,  H01L51/5278

Abstract: An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≦m≦n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.

Abstract translation: 本发明的目的是提供即使在低电压下能够以高亮度发光并且寿命长的发光元件。 发光元件在阳极和阴极之间包括n个EL层（n为2以上的自然数），并且还包括在阳极的第m层和第（m + 1）层之间的EL层 （m是自然数，1≤m≤n-1），包括与第m层EL层接触的第一施主材料的第一层，包含电子传输材料的第二层和接触的第二施主材料 与第一层和第三层包括与第二层和第（m + 1）层相接触的空穴传输材料和受主材料。

公开(公告)号：US20240215290A1

公开(公告)日：2024-06-27

申请号：US18396801

申请日：2023-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Takahiro USHIKUBO ,  Tetsuo TSUTSUI

IPC: H10K50/13 ,  B82Y10/00 ,  H10K50/11 ,  H10K50/19 ,  H10K85/20 ,  H10K85/30 ,  H10K85/60 ,  H10K101/40

CPC classification number: H10K50/13 ,  B82Y10/00 ,  H10K50/11 ,  H10K50/131 ,  H10K50/19 ,  H10K85/221 ,  H10K85/324 ,  H10K85/615 ,  H10K85/621 ,  H10K85/626 ,  H10K85/633 ,  H10K85/636 ,  H10K85/6572 ,  H10K2101/40

Abstract: An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≤m≤n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.