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    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE
    2.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE 审中-公开

    公开(公告)号：US20190386236A1

    公开(公告)日：2019-12-19

    申请号：US16558209

    申请日：2019-09-02

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Tetsuo TSUTSUI

    IPC: H01L51/50 ,  H01L51/00

    Abstract: Light-emitting elements in which an increase of driving voltage can be suppressed are provided. Light-emitting devices whose power consumption is reduced by including such light-emitting elements are also provided. In a light-emitting element having an EL layer between an anode and a cathode, a first layer in which carriers can be produced is formed between the cathode and the EL layer and in contact with the cathode, a second layer which transfers electrons produced in the first layer is formed in contact with the first layer, and a third layer which injects the electrons received from the second layer into the EL layer is formed in contact with the second layer.

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE
    3.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE 审中-公开
    发光元件，发光装置，电子装置和照明装置

    公开(公告)号：US20160240808A1

    公开(公告)日：2016-08-18

    申请号：US15138565

    申请日：2016-04-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Takahiro USHIKUBO ,  Tetsuo TSUTSUI

    IPC: H01L51/50

    CPC classification number: H01L51/504 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5004 ,  H01L51/5044 ,  H01L51/5278

    Abstract: An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≦m≦n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.

    Abstract translation: 本发明的目的是提供即使在低电压下能够以高亮度发光并且寿命长的发光元件。 发光元件在阳极和阴极之间包括n个EL层（n为2以上的自然数），并且还包括在阳极的第m层和第（m + 1）层之间的EL层 （m是自然数，1≤m≤n-1），包括与第m层EL层接触的第一施主材料的第一层，包含电子传输材料的第二层和接触的第二施主材料 与第一层和第三层包括与第二层和第（m + 1）层相接触的空穴传输材料和受主材料。

    LIGHT EMITTING DEVICE
    4.
    发明申请
    LIGHT EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20140091297A1

    公开(公告)日：2014-04-03

    申请号：US14101390

    申请日：2013-12-10

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroko YAMAZAKI ,  Atsushi TOKUDA ,  Tetsuo TSUTSUI

    IPC: H01L51/50

    CPC classification number: H01L51/5016 ,  H01L51/0059 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0077 ,  H01L51/0079 ,  H01L51/008 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0094 ,  H01L51/5048 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/508 ,  H01L51/5206 ,  H01L51/5234 ,  H01L2251/552 ,  Y10S428/917

    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.

    Abstract translation: 通过简化器件结构并避免使用不稳定的材料，提供了具有高效率和改进的稳定性并且可以通过更简单的工艺制造的三重态发光器件。 在三重态发光器件中常规使用的不使用空穴阻挡层的多层器件结构中，即在衬底上形成阳极的器件结构，由空穴传输材料构成的空穴传输层，电子 由电子传输材料和能够三重发光的掺杂剂构成的传输和发光层和阴极，按照所述顺序层叠空穴传输材料和电子传输材料的组合以及电子的组合 运输材料和掺杂剂材料被优化。

    LIGHT EMITTING DEVICE CONTAINING IRIDIUM COMPLEX
    6.
    发明申请
    LIGHT EMITTING DEVICE CONTAINING IRIDIUM COMPLEX 审中-公开
    包含IRIDIUM复合物的发光装置

    公开(公告)号：US20150188071A1

    公开(公告)日：2015-07-02

    申请号：US14656151

    申请日：2015-03-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroko YAMAZAKI ,  Atsushi TOKUDA ,  Tetsuo TSUTSUI

    IPC: H01L51/50 ,  H01L51/00

    CPC classification number: H01L51/5016 ,  H01L51/0059 ,  H01L51/0061 ,  H01L51/0062 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0077 ,  H01L51/0079 ,  H01L51/008 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/0094 ,  H01L51/5048 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/508 ,  H01L51/5206 ,  H01L51/5234 ,  H01L2251/552 ,  Y10S428/917

    Abstract: A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized.

    Abstract translation: 通过简化器件结构并避免使用不稳定的材料，提供了具有高效率和改进的稳定性并且可以通过更简单的工艺制造的三重态发光器件。 在三重态发光器件中常规使用的不使用空穴阻挡层的多层器件结构中，即在衬底上形成阳极的器件结构，由空穴传输材料构成的空穴传输层，电子 由电子传输材料和能够三重发光的掺杂剂构成的传输和发光层和阴极，按照所述顺序层叠空穴传输材料和电子传输材料的组合以及电子的组合 运输材料和掺杂剂材料被优化。

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE
    7.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE 审中-公开
    发光元件，发光装置，电子装置和照明装置

    公开(公告)号：US20130306949A1

    公开(公告)日：2013-11-21

    申请号：US13951028

    申请日：2013-07-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Takahiro USHIKUBO ,  Tetsuo TSUTSUI

    IPC: H01L51/50

    CPC classification number: H01L51/504 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/5004 ,  H01L51/5044 ,  H01L51/5278

    Abstract: An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≦m≦n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer.

    Abstract translation: 本发明的目的是提供即使在低电压下能够以高亮度发光并且寿命长的发光元件。 发光元件在阳极和阴极之间包括n个EL层（n为2以上的自然数），并且还包括在阳极的第m层和第（m + 1）层之间的EL层 （m是自然数，m @ n-1），包括与第m层EL层相接触的第一施主材料的第一层，包含电子传输材料的第二层和接触的第二施主材料 与第一层和第三层包括与第二层和第（m + 1）层相接触的空穴传输材料和受主材料。

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE
    9.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE 审中-公开
    发光元件，发光装置，电子装置和照明装置

    公开(公告)号：US20140374737A1

    公开(公告)日：2014-12-25

    申请号：US14483635

    申请日：2014-09-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Tetsuo TSUTSUI

    IPC: H01L51/50

    CPC classification number: H01L51/5068 ,  H01L51/002 ,  H01L51/0053 ,  H01L51/50 ,  H01L51/506 ,  H01L51/5092

    Abstract: Light-emitting elements in which an increase of driving voltage can be suppressed are provided. Light-emitting devices whose power consumption is reduced by including such light-emitting elements are also provided. In a light-emitting element having an EL layer between an anode and a cathode, a first layer in which carriers can be produced is formed between the cathode and the EL layer and in contact with the cathode, a second layer which transfers electrons produced in the first layer is formed in contact with the first layer, and a third layer which injects the electrons received from the second layer into the EL layer is formed in contact with the second layer.

    Abstract translation: 提供了可以抑制驱动电压增加的发光元件。 还提供了通过包括这种发光元件而降低功耗的发光装置。 在具有在阳极和阴极之间的EL层的发光元件中，在阴极和EL层之间形成能与阴极接触的第一层，其中可以产生载流子的第一层与第二层接触， 第一层形成为与第一层接触，并且将从第二层接收的电子注入到EL层中的第三层形成为与第二层接触。

    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, LIGHTING DEVICE, AND ELECTRONIC DEVICE
    10.
    发明申请
    LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, LIGHTING DEVICE, AND ELECTRONIC DEVICE 有权
    发光元件，发光装置，照明装置和电子装置

    公开(公告)号：US20140070198A1

    公开(公告)日：2014-03-13

    申请号：US14070917

    申请日：2013-11-04

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiromi NOWATARI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Takahiro USHIKUBO ,  Tetsuo TSUTSUI

    IPC: H01L51/50 ,  H01L51/00

    CPC classification number: H01L51/5012 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0067 ,  H01L51/007 ,  H01L51/0072 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5004 ,  H01L51/5016 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5278

    Abstract: An object is to provide a light-emitting element which exhibits light emission with high luminance and can be driven at low voltage. Another object is to provide a light-emitting device or an electronic device with reduced power consumption. Between an anode and a cathode, n (n is a natural number of two or more) EL layers are provided, where between a first EL layer and a second EL layer, a first layer containing any of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, and a rare earth metal compound, a second layer containing a material having a high electron-transporting property in contact with the first layer, and a region containing a material having a high hole-transporting property and an acceptor material in contact with the second layer are provided in this order from the anode side.

    Abstract translation: 本发明的目的是提供一种具有高亮度发光并能够以低电压驱动的发光元件。 另一个目的是提供具有降低的功耗的发光装置或电子装置。 在阳极和阴极之间，提供n（n是两个或多个的自然数）EL层，其中在第一EL层和第二EL层之间，含有碱金属，碱土金属 ，稀土金属，碱金属化合物，碱土金属化合物和稀土金属化合物，含有与第一层接触的电子传输性高的材料的第二层和含有材料的区域 从阳极侧依次设置具有高空穴传输性和与第二层接触的受主材料。

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