公开(公告)号：US20180040641A1

公开(公告)日：2018-02-08

申请号：US15667863

申请日：2017-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Katsuaki TOCHIBAYASHI ,  Kenichi SHIOHAMA

IPC: H01L27/12 ,  H01L29/24 ,  H01L21/44 ,  H01L29/66 ,  H01L21/467 ,  H01L21/477 ,  H01L29/786 ,  H01L29/10

CPC classification number: H01L27/1225 ,  H01L21/44 ,  H01L21/467 ,  H01L21/477 ,  H01L27/1207 ,  H01L27/1259 ,  H01L29/1054 ,  H01L29/24 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having favorable reliability which is capable of retaining data for a long time is provided. The semiconductor device includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide over the first gate insulator, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide, the first conductor, and the second conductor, a second gate insulator over the fourth oxide, and a second gate electrode over the second gate insulator. The first conductor is in contact with a top surface of the second oxide, a side surface of the second oxide that faces the third oxide, and part of a top surface of the first oxide. The second conductor is in contact with a top surface of the third oxide, a side surface of the third oxide that faces the second oxide, and part of the top surface of the first oxide. The fourth oxide is in contact with part of the top surface of the first oxide between the first conductor and the second conductor.