公开(公告)号：US20140186998A1

公开(公告)日：2014-07-03

申请号：US14199222

申请日：2014-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Naoto YAMADE ,  Kyoko YOSHIOKA ,  Yuhei SATO ,  Mari TERASHIMA

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02667 ,  H01L29/78606 ,  H01L29/78693

Abstract: A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.

Abstract translation: 提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。 提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域，以及设置在所述非晶氧化物半导体层上的氧化铝膜。 无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理 在低于或等于450℃的温度下