公开(公告)号：US20210295773A1

公开(公告)日：2021-09-23

申请号：US17221927

申请日：2021-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki OSAME ,  Aya ANZAI ,  Jun KOYAMA ,  Makoto UDAGAWA ,  Masahiko HAYAKAWA ,  Shunpei YAMAZAKI

IPC: G09G3/3233 ,  H01L27/32 ,  H01L33/08

Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.

公开(公告)号：US20180026153A1

公开(公告)日：2018-01-25

申请号：US15672452

申请日：2017-08-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki OSAME ,  Aya ANZAI ,  Jun KOYAMA ,  Makoto UDAGAWA ,  Masahiko HAYAKAWA ,  Shunpei YAMAZAKI

IPC: H01L33/08 ,  G09G3/3233

CPC classification number: H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving This are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.