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公开(公告)号：US20190067336A1
公开(公告)日：2019-02-28
申请号：US16107536
申请日：2018-08-21
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME
Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is fanned so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.
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公开(公告)号：US20170186780A1
公开(公告)日：2017-06-29
申请号：US15361724
申请日：2016-11-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Mitsuaki OSAME
CPC classification number: H01L27/1248 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L29/4958 , H01L29/4966 , H01L29/78645 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
Abstract: Disclosed is a display device including a seal material and a sealing material. The seal material surrounds a pixel portion and the sealing material overlaps with at least any of a driver circuit and a protective circuit. The pixel portion includes a planarization layer and an organic resin film each having an opening, an end portion of which is rounded. The pixel portion further includes a first electrode, a light-emitting member over the first electrode, and a second electrode over the light-emitting member. Part of the first electrode and part of the organic resin film are located in the opening of the planarization layer. Part of the light-emitting member and Part of the second electrode are located in the opening of the organic resin film.
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公开(公告)号：US20130277709A1
公开(公告)日：2013-10-24
申请号：US13922920
申请日：2013-06-20
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Mitsuaki OSAME
IPC: H01L27/12
CPC classification number: H01L27/1248 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L29/4958 , H01L29/4966 , H01L29/78645 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
Abstract: Disclosed is a display device and an electronic apparatus incorporating the display device. The display device includes a transistor and a planarization film over the transistor. The planarization film has an opening where an edge portion is rounded. The display device further includes a first electrode over the planarization film and an organic resin film over the first electrode. The organic resin film also has an opening where an edge portion is rounded. The organic resin film is located in the opening of the planarization film. The first electrode and the transistor are electrically connected to each other through a conductive film. The first electrode is in contact with a top surface of the conductive film. Over the first electrode, a light-emitting member and a second electrode are provided.
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公开(公告)号：US20220077199A1
公开(公告)日：2022-03-10
申请号：US17401360
申请日：2021-08-13
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME
IPC: H01L27/12 , G02F1/1362 , H01L27/32 , H01L33/52
Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic is insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching, to expose an active layer of the TFT.
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公开(公告)号：US20170207292A1
公开(公告)日：2017-07-20
申请号：US15478629
申请日：2017-04-04
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Mitsuaki OSAME
CPC classification number: H05K1/09 , G02F1/133345 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , G02F2201/123 , H01L23/50 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L27/3279 , H01L2924/0002 , H05K5/0017 , H01L2924/00
Abstract: It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and trouble in gray scales, and provide a display device with higher definition, represented by an EL display device and a liquid crystal display device. In the present invention, a wiring including Cu is provided as an electrode or a wiring used for the display device represented by the EL display device and the liquid crystal display device. Besides, sputtering is performed with a mask to form the wiring including Cu. With such structure, it is possible to reduce the voltage drop and a deadened signal.
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Patent Agency Ranking
公开(公告)号：US20160284778A1
公开(公告)日：2016-09-29
申请号：US15082012
申请日：2016-03-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Mitsuaki OSAME , Aya ANZAI , Yu YAMAZAKI , Ryota FUKUMOTO
IPC: H01L27/32 , G09G3/3233 , G09G3/3291 , H01L51/52
CPC classification number: H01L27/3262 , G09G3/2022 , G09G3/3233 , G09G3/3291 , G09G2300/0426 , G09G2300/0842 , G09G2300/0861 , G09G2310/0251 , G09G2320/0219 , G09G2320/0233 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3276 , H01L29/78675 , H01L51/52 , H01L2251/5323 , H04M1/0266
Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.
Abstract translation: 驱动晶体管的栅极的电位固定，并且驱动晶体管在饱和区域中工作，从而随时提供电流。 在线性区域中工作的电流控制晶体管与驱动晶体管串联布置，并且用于传输像素的发射或非发射信号的视频信号通过开关晶体管输入到电流控制晶体管的栅极。
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公开(公告)号：US20160204178A1
公开(公告)日：2016-07-14
申请号：US15074255
申请日：2016-03-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masahiko HAYAKAWA , Yoshifumi TANADA , Mitsuaki OSAME , Aya ANZAI , Ryota FUKUMOTO
IPC: H01L27/32 , H01L29/786
CPC classification number: H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
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公开(公告)号：US20150155308A1
公开(公告)日：2015-06-04
申请号：US14618261
申请日：2015-02-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masahiko HAYAKAWA , Yoshifumi TANADA , Mitsuaki OSAME , Aya ANZAI , Ryota FUKUMOTO
IPC: H01L27/12
CPC classification number: H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
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公开(公告)号：US20150001545A1
公开(公告)日：2015-01-01
申请号：US14481458
申请日：2014-09-09
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME
IPC: H01L27/12
CPC classification number: H01L27/1248 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/13 , H01L27/3246 , H01L27/3276 , H01L33/52 , H01L51/5237 , H01L51/5253
Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.
Abstract translation: 本发明的目的是提供一种具有层间绝缘膜的半导体显示装置，其可以在控制成膜时间的同时获得表面的平面性，并且可以控制用于除去水分的加热处理的处理时间，并且可以防止水分 在层间绝缘膜中不被放电到与层间绝缘膜相邻的膜或电极。 形成与有机树脂相比不容易透过水分的含氮的无机绝缘膜，以覆盖TFT。 接着，在有机绝缘膜上涂布含有感光性丙烯酸树脂的有机树脂膜，将有机树脂膜部分地曝光以打开。 然后，形成与有机树脂相比不容易透过水分的含有氮的无机绝缘膜，以覆盖打开的有机树脂膜。 然后，在有机树脂膜的开口部分中，通过蚀刻部分地打开栅极绝缘膜和含氮的两层无机绝缘膜，以暴露TFT的有源层。
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公开(公告)号：US20180122884A1
公开(公告)日：2018-05-03
申请号：US15845459
申请日：2017-12-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masahiko HAYAKAWA , Yoshifumi TANADA , Mitsuaki OSAME , Aya ANZAI , Ryota FUKUMOTO
IPC: H01L27/32 , H01L29/786 , H01L27/12 , H01L27/02
CPC classification number: H01L27/3262 , G09G3/3233 , G09G2310/0251 , G09G2330/04 , H01L27/0248 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1255 , H01L27/3248 , H01L27/3265 , H01L27/3276 , H01L29/78675
Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.
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