公开(公告)号：US20210295773A1

公开(公告)日：2021-09-23

申请号：US17221927

申请日：2021-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki OSAME ,  Aya ANZAI ,  Jun KOYAMA ,  Makoto UDAGAWA ,  Masahiko HAYAKAWA ,  Shunpei YAMAZAKI

IPC: G09G3/3233 ,  H01L27/32 ,  H01L33/08

Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.

公开(公告)号：US20180026153A1

公开(公告)日：2018-01-25

申请号：US15672452

申请日：2017-08-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki OSAME ,  Aya ANZAI ,  Jun KOYAMA ,  Makoto UDAGAWA ,  Masahiko HAYAKAWA ,  Shunpei YAMAZAKI

IPC: H01L33/08 ,  G09G3/3233

CPC classification number: H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving This are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.

公开(公告)号：US20200020835A1

公开(公告)日：2020-01-16

申请号：US16522202

申请日：2019-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kaoru TSUCHIYA ,  Aya ANZAI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA

IPC: H01L33/52 ,  H01L27/32 ,  H01L51/52

Abstract: An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.

公开(公告)号：US20180122884A1

公开(公告)日：2018-05-03

申请号：US15845459

申请日：2017-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

IPC: H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L27/02

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

公开(公告)号：US20170054934A1

公开(公告)日：2017-02-23

申请号：US15346947

申请日：2016-11-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

IPC: H04N5/655 ,  G06F3/02 ,  H01L51/52 ,  H04N5/64 ,  H01L27/12 ,  H01L27/32

CPC classification number: H04N5/655 ,  G06F3/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L33/60 ,  H01L51/0005 ,  H01L51/5246 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2251/5323 ,  H04N5/642

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Abstract translation: 本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。 根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。 布线等形成为与绝缘层接触，从而增强布线等的覆盖。 此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。 由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。

公开(公告)号：US20220406865A1

公开(公告)日：2022-12-22

申请号：US17893221

申请日：2022-08-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mitsuaki OSAME ,  Aya ANZAI ,  Yu YAMAZAKI ,  Ryota FUKUMOTO

IPC: H01L27/32 ,  G09G3/3233 ,  G09G3/3291 ,  H01L27/12 ,  H04M1/02 ,  H01L51/52

Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

公开(公告)号：US20180019292A1

公开(公告)日：2018-01-18

申请号：US15636908

申请日：2017-06-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki OSAME ,  Aya ANZAI ,  Yu YAMAZAKI ,  Ryota FUKUMOTO

IPC: H01L27/32 ,  H01L27/12 ,  H04M1/02 ,  H01L51/52 ,  G09G3/20 ,  H01L29/786

CPC classification number: H01L27/3262 ,  G09G3/2022 ,  G09G3/3233 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2320/0219 ,  G09G2320/0233 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3276 ,  H01L29/78675 ,  H01L51/52 ,  H01L2251/5323 ,  H04M1/0266

Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.

公开(公告)号：US20140246694A1

公开(公告)日：2014-09-04

申请号：US14274143

申请日：2014-05-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kaoru Tsuchiya ,  Aya ANZAI ,  Masayuki SAKAKURA ,  Masaharu NAGAI ,  Yutaka MATSUDA

IPC: H01L33/52

CPC classification number: H01L33/52 ,  H01L27/3244 ,  H01L27/3276 ,  H01L51/5246 ,  H01L2251/5323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention.

Abstract translation: 本发明的目的是提供一种这样的密封结构，即在使用有机或无机电致发光元件的显示器中，可以获得防止外部和水中的劣化因素等水分或氧气的材料进入的可靠性的密封结构。 鉴于上述目的，着眼于层间绝缘膜的磁导率，抑制了电致发光元件的劣化，并且通过防止水从本发明的层间绝缘膜进入而获得足够的可靠性。

公开(公告)号：US20140110732A1

公开(公告)日：2014-04-24

申请号：US14143652

申请日：2013-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiko HAYAKAWA ,  Yoshifumi TANADA ,  Mitsuaki OSAME ,  Aya ANZAI ,  Ryota FUKUMOTO

IPC: H01L27/02

CPC classification number: H01L27/3262 ,  G09G3/3233 ,  G09G2310/0251 ,  G09G2330/04 ,  H01L27/0248 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78675

Abstract: Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Abstract translation: 半导体元件由于静电放电损坏而劣化或被破坏。 本发明提供一种其中在每个像素中形成保护装置的半导体器件。 保护装置设置有从由电阻元件，电容器元件和整流元件组成的组中选择的一个或多个元件。 通过在发光元件的像素电极和源电极之间设置保护装置，可以减轻由于在像素电极中积聚的电荷导致的晶体管的源电极或漏电极的电位的突然变化，或 晶体管的漏极。 因此防止了由于静电放电损坏导致的半导体元件的劣化或破坏。

公开(公告)号：US20170011686A1

公开(公告)日：2017-01-12

申请号：US15271578

申请日：2016-09-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuaki Osame ,  Aya ANZAI ,  Yoshifumi TANADA ,  Keisuke MIYAGAWA ,  Satoshi SEO ,  Shunpei YAMAZAKI

IPC: G09G3/3233 ,  G09G3/3266

CPC classification number: G09G3/32 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/027 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/043 ,  G09G2320/045 ,  H01L33/0041

Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

Abstract translation: 提供了通过抑制初始发光元件劣化而实现长寿命并能够进行高占空比驱动的发光器件。 通过形成反向偏置电源线（112）和反向偏压TFT（108），一次对一个EL元件（109）施加反向偏置。 因此，可以与图像信号的写入，发光，擦除等的操作同步地执行反向偏置应用。 因此，在保持与常规驱动方法相同的占空比的情况下，可以实现反向偏置应用。