公开(公告)号：US09059694B2

公开(公告)日：2015-06-16

申请号：US14100810

申请日：2013-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masato Ishii

IPC: H03K3/289 ,  H03K3/356 ,  H03K19/00 ,  H03K19/096 ,  H01L27/118 ,  H01L27/12 ,  H01L29/786

CPC classification number: H03K3/356 ,  H01L27/11803 ,  H01L27/1225 ,  H01L29/7869 ,  H03K3/356104 ,  H03K19/0013 ,  H03K19/0016 ,  H03K19/0963

Abstract: An object is to provide a low-power semiconductor device which does not require a latch circuit to hold data at the output of inverter circuits. In the semiconductor device, an input of a first inverter circuit is connected to an input terminal through a source and a drain of a first transistor. An input of a second inverter circuit is connected to an output of the first inverter circuit through a source and a drain of a second transistor. An output of the second inverter is connected to an output terminal. An inverted clock signal and a clock signal are input to gates of the first transistor and the second transistor, respectively. The first and the second transistor have extremely low off-current, which allows the output potential of the device to remain unchanged even when the input varies.

Abstract translation: 目的是提供一种不需要锁存电路来在逆变器电路的输出端保持数据的低功率半导体器件。 在半导体器件中，第一反相器电路的输入通过第一晶体管的源极和漏极连接到输入端子。 第二反相器电路的输入通过第二晶体管的源极和漏极连接到第一反相器电路的输出端。 第二反相器的输出端连接到输出端子。 倒相时钟信号和时钟信号分别输入到第一晶体管和第二晶体管的栅极。 第一和第二晶体管具有非常低的截止电流，这允许器件的输出电位即使输入变化也保持不变。

公开(公告)号：US20140320107A1

公开(公告)日：2014-10-30

申请号：US14262965

申请日：2014-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei Takahashi ,  Jun Koyama ,  Masato Ishii

IPC: H02M3/156

CPC classification number: H02M3/156 ,  H01L27/1225 ,  H01L27/1251 ,  H02M3/155 ,  Y02B70/1483

Abstract: Provided is a DC-DC converter with improved power conversion efficiency. A transistor which is incorporated in the DC-DC converter and functions as a switching element for controlling output power includes, in its channel formation region, a semiconductor material having a wide band gap and significantly small off current compared with silicon. The transistor further comprises a back gate electrode, in addition to a general gate electrode, and a back gate control circuit for controlling a potential applied to the back gate electrode in accordance with the output power from the DC-DC converter. The control of the potential applied to the back gate electrode by the back gate control circuit enables the threshold voltage to decrease the on-state resistance when the output power is high and to increase the off-state current when the output power is low.

Abstract translation: 提供了具有改善的功率转换效率的DC-DC转换器。 结合在DC-DC转换器中并用作用于控制输出功率的开关元件的晶体管在其沟道形成区域中包括与硅相比具有宽带隙和显着小的截止电流的半导体材料。 该晶体管还包括除普通栅电极之外的背栅电极和用于根据来自DC-DC转换器的输出功率来控制施加到背栅极的电位的背栅控制电路。 通过背栅极控制电路控制施加到背栅电极的电位，能够在输出功率较高时使阈值电压降低导通电阻，并且在输出功率较低时增加截止电流。

公开(公告)号：US09543835B2

公开(公告)日：2017-01-10

申请号：US14262965

申请日：2014-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei Takahashi ,  Jun Koyama ,  Masato Ishii

IPC: H02M1/36 ,  H02M3/156 ,  H01L27/12 ,  H02M3/155

CPC classification number: H02M3/156 ,  H01L27/1225 ,  H01L27/1251 ,  H02M3/155 ,  Y02B70/1483

Abstract: Provided is a DC-DC converter with improved power conversion efficiency. A transistor which is incorporated in the DC-DC converter and functions as a switching element for controlling output power includes, in its channel formation region, a semiconductor material having a wide band gap and significantly small off current compared with silicon. The transistor further comprises a back gate electrode, in addition to a general gate electrode, and a back gate control circuit for controlling a potential applied to the back gate electrode in accordance with the output power from the DC-DC converter. The control of the potential applied to the back gate electrode by the back gate control circuit enables the threshold voltage to decrease the on-state resistance when the output power is high and to increase the off-state current when the output power is low.

Abstract translation: 提供了具有改善的功率转换效率的DC-DC转换器。 结合在DC-DC转换器中并用作用于控制输出功率的开关元件的晶体管在其沟道形成区域中包括与硅相比具有宽带隙和显着小的截止电流的半导体材料。 该晶体管还包括除普通栅电极之外的背栅电极和用于根据来自DC-DC转换器的输出功率来控制施加到背栅极的电位的背栅控制电路。 通过背栅极控制电路控制施加到背栅电极的电位，能够在输出功率较高时使阈值电压降低导通电阻，并且在输出功率较低时增加截止电流。