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    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140014954A1

    公开(公告)日：2014-01-16

    申请号：US14024962

    申请日：2013-09-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiromichi GODO ,  Yasuyuki ARAI ,  Satohiro OKAMOTO ,  Mari TERASHIMA ,  Eriko NISHIDA ,  Junpei SUGAO

    IPC: H01L29/786

    CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606

    Abstract: An object is to provide a semiconductor device including an oxide semiconductor in which miniaturization is achieved while favorable characteristics are maintained. The semiconductor includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, and an insulating layer provided in contact with the oxide semiconductor layer. A side surface of the oxide semiconductor layer is in contact with the source electrode or the drain electrode. An upper surface of the oxide semiconductor layer overlaps with the source electrode or the drain electrode with the insulating layer interposed between the oxide semiconductor layer and the source electrode or the drain electrode.

    Abstract translation: 本发明的目的是提供一种包括氧化物半导体的半导体器件，其中实现了小型化，同时保持了有利的特性。 半导体包括与氧化物半导体层接触的氧化物半导体层，源电极和漏电极，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及 绝缘层设置成与氧化物半导体层接触。 氧化物半导体层的侧表面与源电极或漏电极接触。 氧化物半导体层的上表面与源电极或漏电极重叠，绝缘层介于氧化物半导体层与源电极或漏电极之间。

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