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公开(公告)号:US20130075738A1
公开(公告)日:2013-03-28
申请号:US13681556
申请日:2012-11-20
发明人: Mitsuaki Osame , Taichi Kato
IPC分类号: H01L33/00
CPC分类号: H01L33/0041 , G09G3/3258 , G09G3/3291 , G09G2300/0819 , G09G2300/0847 , G09G2310/0251 , G09G2320/0238 , H01L2924/0002 , H01L2924/00
摘要: A display device with a compensation circuit that applies a fixed potential constantly to a gate electrode of a driving transistor for a certain period is provided. Specifically, each difference voltage value between an anode and a cathode of the light emitting element is utilized in the case where the light emitting element emits light and emits no light. In a case where the light emitting element emits light, a potential of the gate electrode of the driving transistor is to be held; and in a case where the light emitting element emits no light, a potential that certainly turns off the gate electrode of the driving transistor is kept on applying to the gate electrode of the driving transistor.
摘要翻译: 提供一种具有将固定电位恒定施加到驱动晶体管的栅电极一定时间的补偿电路的显示装置。 具体地说,在发光元件发光并且不发光的情况下,利用发光元件的阳极和阴极之间的每个差值电压值。 在发光元件发光的情况下,要保持驱动晶体管的栅电极的电位; 并且在发光元件不发光的情况下,保持施加到驱动晶体管的栅电极的驱动晶体管的栅电极肯定关闭的电位。
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公开(公告)号:US09093571B2
公开(公告)日:2015-07-28
申请号:US13681556
申请日:2012-11-20
发明人: Mitsuaki Osame , Taichi Kato
CPC分类号: H01L33/0041 , G09G3/3258 , G09G3/3291 , G09G2300/0819 , G09G2300/0847 , G09G2310/0251 , G09G2320/0238 , H01L2924/0002 , H01L2924/00
摘要: A display device with a compensation circuit that applies a fixed potential constantly to a gate electrode of a driving transistor for a certain period is provided. Specifically, each difference voltage value between an anode and a cathode of the light emitting element is utilized in the case where the light emitting element emits light and emits no light. In a case where the light emitting element emits light, a potential of the gate electrode of the driving transistor is to be held; and in a case where the light emitting element emits no light, a potential that certainly turns off the gate electrode of the driving transistor is kept on applying to the gate electrode of the driving transistor.
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