公开(公告)号：US20140015606A1

公开(公告)日：2014-01-16

申请号：US14023516

申请日：2013-09-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Yasuko WATANABE

IPC: H03F3/45

CPC classification number: G09G3/3225 ,  G09G3/3648 ,  G09G2300/0833 ,  G09G2300/0876 ,  H01L27/0629 ,  H03F3/45 ,  H03F3/45076 ,  H03F3/45179 ,  H03F2203/45112 ,  H03F2203/45628 ,  H03K19/00384 ,  H03K19/01728

Abstract: A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor.

Abstract translation: 晶体管由于由制造工艺或要使用的衬底的差异引起的栅极绝缘膜的变化等因素的积累导致的阈值电压或迁移率的变化以及沟道形成区域的晶体状态的变化 。 本发明提供一种电路，其布置成使得电容器件的两个电极可以在特定晶体管的栅极和源极之间保持电压。 此外，本发明提供一种电路，其具有能够将电容元件的两电极之间的电位差设定为特定晶体管的阈值电压的功能。

公开(公告)号：US20150137154A1

公开(公告)日：2015-05-21

申请号：US14608802

申请日：2015-01-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Keitaro IMAI ,  Aya ANZAI ,  Yasuko WATANABE

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L27/3276 ,  H01L23/564 ,  H01L27/1222 ,  H01L27/3258 ,  H01L51/0005 ,  H01L51/5246 ,  H01L2924/0002 ,  H01L2924/00

Abstract: It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.

Abstract translation: 本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤 设备。 本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。 此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。 此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。 因此，提供了一种生产具有提高的产量的显示装置的方法。

公开(公告)号：US20140152387A1

公开(公告)日：2014-06-05

申请号：US14176676

申请日：2014-02-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime KIMURA ,  Yasuko WATANABE

IPC: H03F3/45

CPC classification number: H03F3/45179 ,  G11C27/028 ,  H03F3/082 ,  H03F3/45183 ,  H03K19/00384

Abstract: The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.

Abstract translation: 晶体管受到阈值电压或迁移率的影响，这是由于由于制造工艺或使用的衬底的差异以及沟道区域晶体状态的变化导致的栅极绝缘膜的变化的因素的集合。 本发明提供了一种电路，其电路具有电容元件的两个电极可以保持特定晶体管的栅极 - 源极电压。 本发明提供一种具有能够通过使用恒流源在电容元件的两个电极之间设置电位差的功能的电路。

公开(公告)号：US20160351117A1

公开(公告)日：2016-12-01

申请号：US15231834

申请日：2016-08-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime KIMURA ,  Yasuko WATANABE

IPC: G09G3/3225 ,  G09G3/36

CPC classification number: G09G3/3225 ,  G09G3/3648 ,  G09G2300/0833 ,  G09G2300/0876 ,  H01L27/0629 ,  H03F3/45 ,  H03F3/45076 ,  H03F3/45179 ,  H03F2203/45112 ,  H03F2203/45628 ,  H03K19/00384 ,  H03K19/01728

Abstract: A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor.