公开(公告)号：US20230144044A1

公开(公告)日：2023-05-11

申请号：US17912753

申请日：2021-03-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoichi Iikubo ,  Daisuke YAMAGUCHI ,  Yuichi YANAGISAWA

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L29/7869 ,  H10B12/05

Abstract: A method for manufacturing a semiconductor device with a high yield is provided. In a semiconductor device including an oxide semiconductor over a substrate, when an insulator in contact with the oxide semiconductor, such as a gate insulator or an interlayer film, is deposited, the insulator can be deposited without diffusion of hydrogen into the oxide semiconductor by setting a constant derived from deposition conditions within a given range. Specifically, setting values of deposition power, the effective electrode area, deposition pressure, and the flow rate of a deposition gas containing hydrogen in the deposition conditions can be selected as appropriate.

公开(公告)号：US09536774B2

公开(公告)日：2017-01-03

申请号：US14336245

申请日：2014-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideto Ohnuma ,  Tetsuya Kakehata ,  Yoichi Iikubo

IPC: H01L21/762 ,  H01L21/84

CPC classification number: H01L21/76254 ,  H01L21/84

Abstract: An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.

Abstract translation: 提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。 提供了使用这种SOI衬底的半导体器件。 在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。 根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。 换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。