公开(公告)号：US20170194503A1

公开(公告)日：2017-07-06

申请号：US15462229

申请日：2017-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro KATAYAMA ,  Chieko MISAWA ,  Yuka YOKOYAMA ,  Hironobu TAKAHASHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606

Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

公开(公告)号：US20150155387A1

公开(公告)日：2015-06-04

申请号：US14556769

申请日：2014-12-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro KATAYAMA ,  Chieko MISAWA ,  Yuka YOKOYAMA ,  Hironobu TAKAHASHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/49

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606

Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

Abstract translation: 提供了一种使用用于背板的氧化物半导体膜的高度可靠的半导体器件。 半导体器件包括第一导电膜，第一导电膜上的第一绝缘膜，在第一绝缘膜之上并与第一导电膜重叠的氧化物半导体膜，氧化物半导体膜上的第二绝缘膜，以及 一对第二导电膜通过包含在第二绝缘膜中的开口部与氧化物半导体膜电连接。 第二绝缘膜与载体在一对第二导电膜之间流动并与氧化物半导体膜的端部重叠的氧化物绝缘膜的区域重叠。