公开(公告)号：US10103274B2

公开(公告)日：2018-10-16

申请号：US15462229

申请日：2017-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Katayama ,  Chieko Misawa ,  Yuka Yokoyama ,  Hironobu Takahashi ,  Kenichi Okazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/12

Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

公开(公告)号：US09601634B2

公开(公告)日：2017-03-21

申请号：US14556769

申请日：2014-12-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Katayama ,  Chieko Misawa ,  Yuka Yokoyama ,  Hironobu Takahashi ,  Kenichi Okazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606

Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.