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公开(公告)号:US20230139773A1
公开(公告)日:2023-05-04
申请号:US17974240
申请日:2022-10-26
申请人: Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
发明人: Xinxing BAI , Yaping WANG , Chunchao FEI
IPC分类号: H01L23/544 , H01L21/66 , H01L23/31 , H01L23/10 , H01L21/56 , H01L21/822
摘要: A semiconductor structure and a fabrication method of the semiconductor structure are provided. The semiconductor structure includes a substrate, and the substrate includes a scribe line region. The semiconductor structure also includes a device layer over the substrate. The device layer includes multiple devices, an interconnection structure electrically connected to the devices, and a dielectric layer surrounding the devices and the interconnection structure. Further, the device layer includes a passivation layer over the device layer, and an alignment mark in the passivation layer over the scribe line region. The alignment mark includes two or more sub-alignment marks, the two or more sub-alignment marks are arranged along an extension direction of the scribe line region, and adjacent sub-alignment marks of the two or more sub-alignment marks are spaced apart from each other.