公开(公告)号：US20230369328A1

公开(公告)日：2023-11-16

申请号：US18127736

申请日：2023-03-29

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Bo SU ,  Abraham YOO ,  Hansu OH ,  Byung Sup SHIM

IPC分类号： H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC分类号： H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66439 ,  H01L29/66545

摘要： A semiconductor structure and a method for forming the same are provided. The method includes: removing a partial thickness of a first channel layer in an N-type region along a direction parallel to the substrate, to form a first trench, where the first trench is defined by the remaining first channel layer and an adjacent sacrificial layer or by the remaining first channel layer and the adjacent sacrificial layer and a limiting layer; filling the first trench with a sidewall channel film; removing the remaining first channel layer in the N-type region, so that a second trench is defined between the sidewall channel film and the adjacent sacrificial layer or between the sidewall channel film and the adjacent sacrificial layer and the limiting layer; and filling the second trench with a center channel film, where the center channel film and the sidewall channel film are in contact with each other to form a second channel layer, and the second channel layer is configured to improve carrier mobility in a channel of an NMOS transistor. Embodiments of the present disclosure improve performance of a semiconductor structure.