公开(公告)号：US09875965B2

公开(公告)日：2018-01-23

申请号：US15210623

申请日：2016-07-14

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Guangcai Fu ,  Tianlun Yang ,  Xiaoping Zhang

IPC分类号： H01L23/48 ,  H01L23/528 ,  B81C1/00 ,  H01L21/475 ,  B81B7/00 ,  H01L21/02 ,  H01L23/532 ,  H01L29/06

CPC分类号： H01L23/5283 ,  B81B7/007 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C1/00095 ,  B81C1/00849 ,  B81C2201/0132 ,  H01L21/02068 ,  H01L21/475 ,  H01L23/53219 ,  H01L23/53233 ,  H01L23/53247 ,  H01L29/0649 ,  H01L2221/1063

摘要： Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.

公开(公告)号：US09416004B2

公开(公告)日：2016-08-16

申请号：US14595543

申请日：2015-01-13

申请人： Semiconductor Manufacturing International (Shanghai) Corporation

发明人： Guangcai Fu ,  Tianlun Yang ,  Xiaoping Zhang

IPC分类号： H01L21/44 ,  B81C1/00 ,  H01L21/475

CPC分类号： H01L23/5283 ,  B81B7/007 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C1/00095 ,  B81C1/00849 ,  B81C2201/0132 ,  H01L21/02068 ,  H01L21/475 ,  H01L23/53219 ,  H01L23/53233 ,  H01L23/53247 ,  H01L29/0649 ,  H01L2221/1063

摘要： Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.

摘要翻译： 提供了半导体器件和制造方法。 在半导体器件中，半导体衬底包括具有与半导体衬底的顶表面共面的顶表面的第一电极层。 在半导体衬底和第一电极层上形成牺牲层。 在牺牲层上形成由导电材料制成的第一掩模层。 蚀刻第一掩模层和牺牲层直到暴露第一​​电极层的表面以形成穿过第一掩模层和牺牲层的开口。 执行清洁处理以去除粘附到第一掩模层的表面并附着到开口的侧壁和底表面上的蚀刻副产物。 在清洁过程之后，在开口中形成导电塞。