公开(公告)号：US11307502B2

公开(公告)日：2022-04-19

申请号：US16952245

申请日：2020-11-19

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Feng Bai ,  Wanjuan Zhang ,  Yibin Huang ,  Yao Xu ,  Fan Zhang

IPC分类号： H01L21/027 ,  G03F7/20

摘要： Embodiments and implementations of the present disclosure provide assistant pattern configuration methods, masks and forming methods thereof, and related devices. One form of a configuration method includes: providing a main pattern having an edge extending along a first direction, where a second direction is perpendicular to the first direction, the main pattern having a first optimal focal plane in the first direction and a second optimal focal plane in the second direction when exposed, and where there is an optimal focal plane offset between the first optimal focal plane and the second optimal focal plane; providing an initial assistant pattern around the main pattern; extracting a configuration parameter of the initial assistant pattern, the configuration parameter corresponding to the optimal focal plane offset; obtaining configuration information corresponding to a preset optimal focal plane offset based on an adjustment of the configuration parameter; and configuring an assistant pattern around the main pattern according to the configuration information. Embodiments and implementations of the present disclosure can improve lithographic quality.

公开(公告)号：US11520225B2

公开(公告)日：2022-12-06

申请号：US17030075

申请日：2020-09-23

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Feng Bai ,  Wanjuan Zhang ,  Yingfang Wang

IPC分类号： G03F1/36 ,  G03F7/20

摘要： A method for correcting mask patterns includes providing a target layout, including a plurality of main patterns; dividing the target layout into a plurality of first regions along a first direction; acquiring position information of each first region of the plurality of first regions; acquiring a first model of each first region according to the position information of the first region; acquiring pattern parameters of auxiliary patterns around each main pattern of the first region; and arranging, around each main pattern, the auxiliary patterns of the main pattern according to the pattern parameters of the auxiliary patterns.

公开(公告)号：US20210271176A1

公开(公告)日：2021-09-02

申请号：US16952245

申请日：2020-11-19

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Feng Bai ,  Wanjuan Zhang ,  Yibin Huang ,  Yao Xu ,  Fan Zhang

IPC分类号： G03F7/20 ,  H01L21/027

摘要： Embodiments and implementations of the present disclosure provide assistant pattern configuration methods, masks and forming methods thereof, and related devices. One form of a configuration method includes: providing a main pattern having an edge extending along a first direction, where a second direction is perpendicular to the first direction, the main pattern having a first optimal focal plane in the first direction and a second optimal focal plane in the second direction when exposed, and where there is an optimal focal plane offset between the first optimal focal plane and the second optimal focal plane; providing an initial assistant pattern around the main pattern; extracting a configuration parameter of the initial assistant pattern, the configuration parameter corresponding to the optimal focal plane offset; obtaining configuration information corresponding to a preset optimal focal plane offset based on an adjustment of the configuration parameter; and configuring an assistant pattern around the main pattern according to the configuration information. Embodiments and implementations of the present disclosure can improve lithographic quality.