公开(公告)号：US11988968B2

公开(公告)日：2024-05-21

申请号：US17060415

申请日：2020-10-01

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Song Bai ,  Qiliang Ma ,  Tao Song ,  Sha Sha

IPC分类号： G03F7/00 ,  G06T7/00 ,  H01L21/66

CPC分类号： G03F7/70633 ,  G06T7/0004 ,  H01L22/20 ,  G06T2207/30148

摘要： A method for detecting an overlay precision and a method for compensating an overlay deviation are provided. The method for detecting the overlay precision includes providing a wafer to-be-detected, where the wafer to-be-detected includes a photoresist layer which has been exposed and developed; performing a first detection on the wafer to-be-detected using an optical overlay precision measurement and acquiring first overlay precision information of the photoresist layer; performing a second detection on the wafer to-be-detected using the optical overlay precision measurement, and acquiring second overlay precision information of the photoresist layer, where a wavelength or a polarization direction of a light source of the second detection is different from a wavelength or a polarization direction of a light source of the first detection; and acquiring overlay precision deviation information of the wafer to-be-detected according to the first overlay precision information and the second overlay precision information.

公开(公告)号：US11587836B2

公开(公告)日：2023-02-21

申请号：US17022364

申请日：2020-09-16

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Song Bai ,  Qi Liang Ma ,  Tao Song ,  Xuan Li

IPC分类号： H01L21/8238 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/308 ,  H01L29/78

摘要： A semiconductor structure and its fabrication method are provided in the present disclosure. The method includes providing a layer to-be-etched, including first regions and second regions. The method further includes forming a plurality of discrete first sacrificial layers on the layer to-be-etched, where a plurality of openings is between the plurality of first sacrificial layers and includes first openings on the first regions. The method further includes forming initial sidewall spacer structures on sidewalls of the plurality of first sacrificial layers, where the initial sidewall spacer structures include first sidewall spacers, and the first sidewall spacers fill the first openings. The method further includes, using the first sidewall spacers as an alignment mark, forming a first mask layer on the layer to-be-etched and the initial sidewall spacer structures, where the first mask layer exposes a portion of the layer to-be-etched and a portion of the initial sidewall spacer structures.