公开(公告)号：US20220277992A1

公开(公告)日：2022-09-01

申请号：US17744434

申请日：2022-05-13

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Hao ZHANG ,  Xuezhen JING ,  Jingjing TAN ,  Tiantian ZHANG ,  Zhangru XIAO ,  Zengsheng XU

IPC分类号： H01L21/768 ,  H01L23/535

摘要： The semiconductor structure includes a substrate; a dielectric layer formed on the substrate; an opening, formed through the dielectric layer; a contact layer formed at bottom of the opening; a blocking layer formed on a sidewall surface of the opening; and a plug formed in the opening. The plug is formed on a sidewall surface of the blocking layer and in contact with the contact layer.

公开(公告)号：US20240258238A1

公开(公告)日：2024-08-01

申请号：US18565406

申请日：2021-05-31

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Zengsheng XU ,  Xuezhen JING ,  Hao ZHANG ,  Tiantian ZHANG ,  Hailong YU

IPC分类号： H01L23/532 ,  H01L21/285

CPC分类号： H01L23/53257 ,  H01L21/28568

摘要： A semiconductor structure includes a substrate, a covering layer on the substrate, an auxiliary layer on the covering layer, a first dielectric layer on surfaces of the substrate and the auxiliary layer, and a conductive structure in the first dielectric layer. The semiconductor structure also includes a second dielectric layer on surfaces of the first dielectric layer and the conductive structure, a first opening in the second dielectric layer and the first dielectric layer, and a second opening in the second dielectric layer. The first opening exposes the auxiliary layer, and the second opening exposes the top surface of the conductive structure. A first conductive layer is in the first opening, and a second conductive layer is in the second opening. A growth rate of the first conductive layer over the auxiliary layer is higher than the growth rate of the first conductive layer over the covering layer.

公开(公告)号：US20210066124A1

公开(公告)日：2021-03-04

申请号：US17006000

申请日：2020-08-28

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Tiantian ZHANG ,  Zengsheng XU ,  Jingjing TAN

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

摘要： A semiconductor device and a method for forming the semiconductor device are provided. The method includes providing a substrate and forming an interlayer dielectric layer on the substrate. The method also includes forming a contact hole exposing a portion of the surface of the substrate by etching the interlayer dielectric layer. In addition, the method includes forming an adhesion layer at a bottom and on a sidewall of the contact hole, and forming a metal seed layer at a bottom and on a sidewall of the adhesion layer by a selective growth method. Further, the method includes forming a metal layer filling the contact hole on the metal seed layer.

公开(公告)号：US20210043505A1

公开(公告)日：2021-02-11

申请号：US16987556

申请日：2020-08-07

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Hao ZHANG ,  Xuezhen JING ,  Jingjing TAN ,  Tiantian ZHANG ,  Zhangru XIAO ,  Zengsheng XU

IPC分类号： H01L21/768 ,  H01L23/535

摘要： A method for forming a semiconductor structure includes forming a dielectric layer with an opening on a substrate; forming a material film in the opening; forming a blocking film on the material film; and removing the blocking film at the bottom of the opening to expose the material film. The remaining blocking film forms an initial blocking layer. The method further includes forming a conductive-material film in the opening; performing an annealing process to form a contact layer at the bottom of the opening by making the substrate, the material film, and the conductive-material film react with each other; and planarizing the conductive-material film, the initial blocking layer, and the material film to expose the dielectric layer. The remaining initial blocking layer forms a blocking layer in the opening; and the remaining conductive-material film forms a plug in contact with the blocking layer and the contact layer.