公开(公告)号：US11005495B1

公开(公告)日：2021-05-11

申请号：US16840198

申请日：2020-04-03

申请人： Senseeker Engineering Inc.

发明人： Kenton Veeder ,  Nishant Dhawan ,  Sean McCotter

IPC分类号： H03M1/00 ,  H03M3/00 ,  H03K3/356 ,  H04N5/378

摘要： The present disclosure provides a current generation circuit. In one aspect, the circuit includes a current source transistor and a current sink transistor connected to the current source transistor in series, with respective sources of the current source and sink transistors being connected with each other at a common node. A voltage difference between respective gates of the current source and sink transistors defines a current value flowing through the series, the voltage difference being variable such that the current value is either time-dependent or time-independent. Respective drains of the current source and sink transistors provide a high resistance output necessary to provide a current source or sink function thereby rejecting influence of drain variation or error on the current value.