公开(公告)号：US20140335677A1

公开(公告)日：2014-11-13

申请号：US14361117

申请日：2012-11-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Daewoong Suh ,  Kyu Ho Lee ,  Jon Min Jang ,  Chi Hyun In

IPC: H01L21/02

CPC classification number: H01L21/02664 ,  H01L21/0254 ,  H01L21/02587 ,  H01L33/0079

Abstract: The present invention provides a method for separating an epitaxial layer from a growth substrate, comprising growing an epitaxial layer including a plurality of layers on a growth substrate; etching an edge of at least one layer in the epitaxial layer to form a notch; forming a bonding layer on the epitaxial layer, contacting a bonding substrate onto the bonding layer, and then heating the bonding layer to a bonding temperature for joining the epitaxial layer and the bonding substrate; and cooling the bonding layer after the heating of the boding layer, so that the epitaxial layer and the bonding substrate are joined by the bonding layer, and the epitaxial layer is separated from the growth substrate, wherein the separating the epitaxial layer from the growth substrate starts with separation from the at least one layer where the notch is formed.

Abstract translation: 本发明提供了一种用于从生长衬底分离外延层的方法，包括在生长衬底上生长包括多个层的外延层; 蚀刻外延层中的至少一层的边缘以形成凹口; 在所述外延层上形成接合层，将接合基板接触到所述接合层上，然后将所述接合层加热至接合所述外延层和所述接合基板的接合温度; 并且在加热所述粘合层之后冷却所述接合层，使得所述外延层和所述接合基板通过所述接合层接合，并且所述外延层与所述生长基板分离，其中所述外延层与所述生长基板分离 从形成有凹口的至少一个层分离开始。