公开(公告)号：US10741724B2

公开(公告)日：2020-08-11

申请号：US15255059

申请日：2016-09-01

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jacob J. Richardson ,  Evan C. O'Hara ,  SeomGeun Lee ,  ChanSeop Shin ,  MyeongHak Yang ,  JinWoong Lee

IPC: H01L33/42 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38

Abstract: LED devices having high-quality single crystal ZnO structures for spreading currents and extracting light out of the LEDs are disclosed. In one aspect, a LED device is provided to include a substrate; a first semiconductor layer exhibiting a first conductivity type and formed over the substrate; an active light-emitting structure formed over the first semiconductor layer, the active light-emitting structure operable to emit light under electrical excitation; a second semiconductor layer exhibiting a second conductivity type and formed over the active light-emitting structure; and a single crystal ZnO structure formed over the second semiconductor layer and including a bottom single crystal ZnO portion over the second semiconductor layer and a top single crystal ZnO portion extending from the bottom single crystal ZnO portion, wherein the bottom single crystal ZnO portion is a contiguous single crystal ZnO portion without having voids.