ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD THEREFOR
    1.
    发明申请
    ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND FABRICATION METHOD THEREFOR 有权
    有机薄膜晶体管基板及其制造方法

    公开(公告)号:US20110053315A1

    公开(公告)日:2011-03-03

    申请号:US12871642

    申请日:2010-08-30

    IPC分类号: H01L51/30

    摘要: An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.

    摘要翻译: 有机薄膜晶体管基板包括形成在基板上的栅极线,与栅极线相交并且限定子像素区域的数据线,包括连接到栅极线的栅电极的有机薄膜晶体管,连接到数据的源电极 线路,面对源电极的漏极电极和形成源极和漏极之间的沟道的有机半导体层,与栅极线平行的钝化层,用于覆盖有机半导体层和有机半导体层的外围区域,以及 用于确定有机半导体层和钝化层的位置的堤绝缘层。

    ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    有机薄膜晶体管基板及其制造方法

    公开(公告)号:US20080023695A1

    公开(公告)日:2008-01-31

    申请号:US11782980

    申请日:2007-07-25

    IPC分类号: H01L51/10 H01L51/40

    摘要: An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.

    摘要翻译: 一种有机薄膜晶体管基板及能够防止有机半导体层溢出的有机薄膜晶体管基板的制造方法。 有机薄膜晶体管基板包括形成在基板上的栅极线,与栅极线交叉的数据线,连接到栅极线和数据线并包括有机半导体层的薄膜晶体管,连接到薄的晶体管的像素电极 薄膜晶体管,保护薄膜晶体管的有机保护层,提供有机栅极绝缘层和有机半导体层中的填充区域的第一堤岸绝缘层和提供有机半导体层的填充区域的第二堤岸绝缘层 与第一堤层绝缘层一起形成在薄膜晶体管的源电极和漏电极上。

    ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    有机薄膜晶体管基板及其制造方法

    公开(公告)号:US20100173451A1

    公开(公告)日:2010-07-08

    申请号:US12724265

    申请日:2010-03-15

    IPC分类号: H01L51/40 H01L21/336

    摘要: The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.

    摘要翻译: 本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。 根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层,以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层,以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层,形成在薄膜晶体管的源电极和漏电极上,从而填充有机半导体层。

    ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
    有机薄膜晶体管基板及其制造方法

    公开(公告)号:US20080023697A1

    公开(公告)日:2008-01-31

    申请号:US11828971

    申请日:2007-07-26

    IPC分类号: H01L51/40 H01L51/00

    摘要: The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.The organic thin film transistor according to the present invention comprises a gate line formed on a substrate; a data line which intersects the gate line with an organic gate insulating layer interposed therebetween to define a pixel area; a thin film transistor connected with the gate line and the data line and which includes an organic semiconductive layer; a pixel electrode connected with the thin film transistor and formed in the pixel area; an organic protective layer formed parallel with the gate line to cover the organic semiconductive layer and its peripheral area; a first border insulating layer stepwise formed so that the organic gate insulating layer and the protective layer are filled, and a second border insulating layer formed on the source electrode and the drain electrode of the thin film transistor so that the organic semiconductive layer is filled.

    摘要翻译: 本发明提供一种能够均匀形成栅极绝缘层和保护层的厚度并防止有机半导体层溢出的有机薄膜晶体管基板及其制造方法。 根据本发明的有机薄膜晶体管包括形成在基板上的栅极线; 与栅极线相交的数据线和插入其间的有机栅极绝缘层,以限定像素区域; 与栅极线和数据线连接并且包括有机半导体层的薄膜晶体管; 与所述薄膜晶体管连接并形成在所述像素区域中的像素电极; 与栅极线平行地形成以覆盖有机半导体层及其周边区域的有机保护层; 逐层形成第一边界绝缘层,以便填充有机栅极绝缘层和保护层;以及第二边界绝缘层,形成在薄膜晶体管的源电极和漏电极上,从而填充有机半导体层。

    ADAPTIVE DATA COMMUNICATION CONTROL METHOD AND PORTABLE DEVICE FOR SUPPORTING THE SAME
    5.
    发明申请
    ADAPTIVE DATA COMMUNICATION CONTROL METHOD AND PORTABLE DEVICE FOR SUPPORTING THE SAME 有权
    自适应数据通信控制方法及其支持的便携设备

    公开(公告)号:US20120077495A1

    公开(公告)日:2012-03-29

    申请号:US13247164

    申请日:2011-09-28

    IPC分类号: H04W60/00

    摘要: A method and a portable device for supporting an adaptive data communication control are provided. The device includes a memory unit, a control unit, and a radio frequency unit. The memory unit stores a table that contains data communication setting information corresponding to each service operator network. The control unit performs a Public Land Mobile Network (PLMN) selection after entering into a service area of specific service operator network, and receives Mobile Country Code/Mobile Network Code (MCC/MNC) information from the specific service operator network while the PLMN selection is being performed. The control unit extracts the data communication setting information corresponding to the MCC/MNC information from the table, and establishes a data communication connection with the specific service operator network according to the extracted data communication setting information. The radio frequency unit performs the established data communication with the specific service operator network under the control of the control unit.

    摘要翻译: 提供了一种用于支持自适应数据通信控制的方法和便携式设备。 该装置包括存储单元,控制单元和射频单元。 存储单元存储包含与各服务运营商网络对应的数据通信设定信息的表。 控制单元在进入特定服务运营商网络的服务区域之后执行公共陆地移动网络(PLMN)选择,并从特定服务运营商网络接收移动国家/地区代码/移动网络代码(MCC / MNC)信息,而PLMN选择 正在执行。 控制单元从表中提取与MCC / MNC信息对应的数据通信设定信息,根据所提取的数据通信设定信息与特定服务运营商网络建立数据通信连接。 无线电频率单元在控制单元的控制下执行与特定服务运营商网络建立的数据通信。