公开(公告)号：US20120294137A1

公开(公告)日：2012-11-22

申请号：US13557584

申请日：2012-07-25

申请人： Seung-bum HONG ,  Sung-hoon CHOA ,  Ju-hwan JUNG ,  Hyoung-soo KO ,  Yong Kwan KIM

发明人： Seung-bum HONG ,  Sung-hoon CHOA ,  Ju-hwan JUNG ,  Hyoung-soo KO ,  Yong Kwan KIM

IPC分类号： G11B9/00

CPC分类号： G11B9/02

摘要： An apparatus can include a read head formed in a semiconductor layer of an air bearing surface, the read head comprising a channel region formed between a source and drain which are doped to a higher conductivity than the channel region; wherein the channel region is configured to generate a charge carrier depletion region in response to a first ferroelectric dipole direction, and to accumulate charge carriers in response to a second ferroelectric dipole direction.

摘要翻译： 一种装置可以包括形成在空气轴承表面的半导体层中的读取头，读取头包括形成在源极和漏极之间的沟道区，掺杂到比沟道区更高的导电性; 其中所述沟道区被配置为响应于第一铁电偶极方向产生电荷载流子耗尽区，并且响应于第二铁电偶极方向累积电荷载流子。

公开(公告)号：US20090090936A1

公开(公告)日：2009-04-09

申请号：US12120816

申请日：2008-05-15

申请人： Ju-hwan JUNG ,  Hyoung-soo Ko ,  Seung-bum Hong

发明人： Ju-hwan JUNG ,  Hyoung-soo Ko ,  Seung-bum Hong

IPC分类号： H01L29/772 ,  H01L21/336 ,  H01S5/00 ,  G11B9/00

CPC分类号： G11B9/02 ,  H01L29/66462 ,  H01L29/7785 ,  H01L29/7787

摘要： Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers.

摘要翻译： 提供了一种电场头，其包括用于读取记录在记录介质上的信息的电阻传感器。 电阻传感器包括包括源极和漏极的第一半导体层以及与第一半导体层非均匀组合的第二半导体层。 此外，电场头还包括在第一和第二半导体层的结区中的源极和漏极之间的沟道。

公开(公告)号：US20080078239A1

公开(公告)日：2008-04-03

申请号：US11750404

申请日：2007-05-18

申请人： Hyoung-soo KO ,  Ju-hwan JUNG ,  Seung-bum HONG ,  Hong-sik PARK ,  Chul-min PARK

发明人： Hyoung-soo KO ,  Ju-hwan JUNG ,  Seung-bum HONG ,  Hong-sik PARK ,  Chul-min PARK

IPC分类号： G01B5/28 ,  H01L21/00

CPC分类号： G01Q60/30 ,  G01Q60/40

摘要： A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape

摘要翻译： 提供具有楔形电阻端头的半导体探针和制造半导体探针的方法。 半导体探针包括掺杂有第一杂质的电阻尖端，具有掺杂有与第一杂质具有相反极性的低浓度第二杂质的电阻区域，并且具有掺杂高浓度的第一和第二半导体电极区域 的第二杂质在电阻尖端的两个侧面上。 探针还包括在其边缘部分上具有电阻尖端的悬臂，并且电阻尖端的端部具有楔形

公开(公告)号：US20090285082A1

公开(公告)日：2009-11-19

申请号：US12251072

申请日：2008-10-14

申请人： Hyoung-soo KO ,  In-kyeong YOO ,  Ju-hwan JUNG ,  Chul-min PARK

发明人： Hyoung-soo KO ,  In-kyeong YOO ,  Ju-hwan JUNG ,  Chul-min PARK

IPC分类号： G11B9/00 ,  H01L21/00

CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

摘要： An electric field head includes a body portion and a read head having a channel layer provided on an air bearing surface (ABS) of the body portion facing a recording medium and a source and a drain contacting both ends of the channel layer. The electric field head is manufactured by defining a head forming portion of a substrate, separating the head forming portion from the substrate, forming an ABS pattern on a side surface of the separated head forming portion, and forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed. An information storage device includes a ferroelectric recording medium and the electric field head.

摘要翻译： 电场头包括主体部分和读取头，其具有设置在主体部分面向记录介质的空气轴承表面（ABS）上的通道层，以及与沟道层两端接触的源极和漏极。 通过限定基板的头部形成部分来制造电场磁头，将磁头形成部分与基板分离，在分离的磁头形成部分的侧表面上形成ABS图案，并且形成用于读取磁头的通道层 形成ABS图案的头部形成部分的表面。 信息存储装置包括铁电记录介质和电场磁头。

公开(公告)号：US20090161524A1

公开(公告)日：2009-06-25

申请号：US12142048

申请日：2008-06-19

申请人： Chul-min PARK ,  Ju-hwan JUNG ,  Hyoung-soo KO

发明人： Chul-min PARK ,  Ju-hwan JUNG ,  Hyoung-soo KO

IPC分类号： G11B9/00

CPC分类号： G11B9/02 ,  G11B5/3173

摘要： A data reading/writing head reading/writing data from/to a ferroelectric recording medium by using an electric field effect, includes a semiconductor body having a first plane on which an air bearing pattern is formed and a second plane crossing the first plane. A sensing unit is located on the second plane and reads data written to the ferroelectric recording medium, wherein the second plane is separated from the first plane, and a floating gate is disposed on the sensing unit, wherein an end of the floating gate extends to the first plane to guide an electric field from the ferroelectric recording medium to the sensing unit.

摘要翻译： 通过使用电场效应从/向铁电记录介质读取/写入数据的数据读/写头包括半导体本体，其具有形成有空气轴承图案的第一平面和与第一平面交叉的第二平面。 感测单元位于第二平面上并读取写入铁电记录介质的数据，其中第二平面与第一平面分离，并且浮动栅极设置在感测单元上，其中浮动栅极的一端延伸到 引导从铁电记录介质到感测单元的电场的第一平面。

公开(公告)号：US20080094089A1

公开(公告)日：2008-04-24

申请号：US11772441

申请日：2007-07-02

申请人： Ju-hwan JUNG ,  Jae-hong LEE ,  Hyung-cheol SHIN ,  Jun-soo KIM ,  Seung-bum HONG

发明人： Ju-hwan JUNG ,  Jae-hong LEE ,  Hyung-cheol SHIN ,  Jun-soo KIM ,  Seung-bum HONG

IPC分类号： G01R1/067 ,  H01L21/00

CPC分类号： G01Q60/30

摘要： A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions

摘要翻译： 提供具有压花电阻端头的半导体探针和制造半导体探针的方法。 半导体探针包括突起部，该突起部在与悬臂的长度方向交叉的第一方向上在悬臂上突出规定的高度，形成在突出部上的压电电阻端子以及形成在突起部的相反侧的第一和第二半导体电极区域 在突出部分处的压电电阻尖端，其中所述悬臂掺杂有第一掺杂剂，所述第一和第二半导体电极区域和所述压电电阻尖端掺杂有与所述第一掺杂剂具有不同极性的第二掺杂剂，并且所述压花电阻尖端 掺杂浓度低于第一和第二半导体电极区域

公开(公告)号：US20070267385A1

公开(公告)日：2007-11-22

申请号：US11835874

申请日：2007-08-08

申请人： Ju-hwan JUNG ,  Jun-soo Kim ,  Hyung-cheol Shin ,  Seung-bum Hong

发明人： Ju-hwan JUNG ,  Jun-soo Kim ,  Hyung-cheol Shin ,  Seung-bum Hong

IPC分类号： B44C1/22

CPC分类号： G01Q60/30 ,  G01Q60/38

摘要： A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

摘要翻译： 提供了具有高分辨率尖端的半导体探针及其制造方法。 半导体探针包括：掺杂有第一杂质的悬臂; 从所述悬臂的端部突出并轻微掺杂与所述第一杂质极性相反的第二杂质的电阻凸部; 以及第一和第二电极区域，形成在电阻凸部的任一侧上并且重掺杂有第二杂质。