CONDUCTIVE ATOMIC FORCE MICROSCOPE AND METHOD OF OPERATING THE SAME
    1.
    发明申请
    CONDUCTIVE ATOMIC FORCE MICROSCOPE AND METHOD OF OPERATING THE SAME 有权
    导电原子力显微镜及其操作方法

    公开(公告)号:US20160033550A1

    公开(公告)日:2016-02-04

    申请号:US14694115

    申请日:2015-04-23

    CPC classification number: G01Q60/40 G01Q70/06

    Abstract: A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.

    Abstract translation: 一种导电原子力显微镜,包括多个探针结构,每个探针结构包括探针和连接到其上的悬臂,施加偏置电压的电源,检测在样品物体和每个探针之间流动的第一电流的电流检测器和第二电流 在测量对象和每个探针之间流动,并且基于第一和第二电流分别计算样本和测量对象的代表性电流,以及控制器,计算由每个探针测量的样本对象的代表性电流之间的比率 计算相对于由每个探针测量的测量对象的代表性电流的缩放因子,并且可以提供基于第二测量电流和缩放因子来确定可重现的电流测量值。

    Image force microscopy of molecular resonance
    3.
    发明授权
    Image force microscopy of molecular resonance 有权
    图像力显微镜分子共振

    公开(公告)号:US08739311B2

    公开(公告)日:2014-05-27

    申请号:US13816726

    申请日:2011-08-11

    CPC classification number: G01Q60/38 G01Q30/02 G01Q60/34 G01Q60/40

    Abstract: A new method in microscopy is provided which extends the domain of AFM's to nanoscale spectroscopy. Molecular resonance of nanometer features can be detected and imaged purely by mechanical detection of the force gradient between the interaction of the optically driven molecular dipole/multipole and its mirror image in a Platinum coated scanning probe tip. The method is extendable to obtain nanoscale spectroscopic information ranging from infrared to UV and RF.

    Abstract translation: 提供了一种新的显微镜方法,将AFM的领域扩展到纳米级光谱。 纳米特征的分子共振可以通过机械检测在铂涂层扫描探针尖端中光学驱动的分子偶极/多极与其镜像的相互作用之间的力梯度来纯化而被检测和成像。 该方法可扩展,以获得从红外到UV和RF的纳米级光谱信息。

    Fabrication of a microcantilever microwave probe
    4.
    发明申请
    Fabrication of a microcantilever microwave probe 有权
    微型悬臂微波探头的制作

    公开(公告)号:US20120192319A1

    公开(公告)日:2012-07-26

    申请号:US13009990

    申请日:2011-01-20

    CPC classification number: G01Q60/22 G01Q60/40

    Abstract: A microwave probe having a metal tip on the free end of a microcantilever. In one embodiment, a pyramidal pit is isotropically etched in a device wafer of monocrystalline silicon. Oxidation may sharpen the pit. Deposited metal forms the metal tip in the pit and a bottom shield. Other metal sandwiched between equally thick dielectric layers contact the tip and form a conduction path along the cantilever for the probe and detected signals. Further metal forms a top shield overlying the conduction path and the dielectrically isolated tip and having equal thickness to the bottom shield, thus producing together with the symmetric dielectric layers a balanced structure with reduced thermal bending. The device wafer is bonded to a handle wafer. The handle is formed and remaining silicon of the device wafer is removed to release the cantilever.

    Abstract translation: 微型探针在微型悬臂梁的自由端上具有金属尖端。 在一个实施例中,在单晶硅的器件晶片中各向同性蚀刻金字塔形凹坑。 氧化可能会削弱坑。 沉积的金属在凹坑中形成金属尖端和底部屏蔽。 夹在同等厚度的电介质层之间的其他金属接触尖端,并形成沿着悬臂的探针和检测信号的导电路径。 另外的金属形成覆盖导电路径和介电隔离尖端的顶部屏蔽,并且具有与底部屏蔽件相等的厚度,从而与对称的电介质层一起产生具有降低的热弯曲的平衡结构。 器件晶片被结合到处理晶片。 形成手柄并移除器件晶片的剩余硅以释放悬臂。

    High Frequency Deflection Measurement of IR Absorption
    5.
    发明申请
    High Frequency Deflection Measurement of IR Absorption 有权
    红外吸收的高频偏转测量

    公开(公告)号:US20120167261A1

    公开(公告)日:2012-06-28

    申请号:US13307464

    申请日:2011-11-30

    Abstract: An AFM based technique has been demonstrated for performing highly localized IR spectroscopy on a sample surface by using the AFM probe to detect wavelength dependent IR radiation interaction, typically absorption with the sample in the region of the tip. The tip may be configured to produce electric field enhancement when illuminated by a radiation source. This enhancement allows for significantly reduced illumination power levels resulting in improved spatial resolution by confining the sample-radiation interaction to the region of field enhancement which is highly localized to the tip.

    Abstract translation: 已经证明了基于AFM的技术,通过使用AFM探针来检测波长相关的IR辐射相互作用(通常在尖端区域中的样品吸收)来在样品表面上进行高度局部化的IR光谱。 尖端可以被配置为当由辐射源照射时产生电场增强。 该增强允许显着降低的照明功率水平,通过将样本 - 辐射相互作用限制在高度定位于尖端的场增强区域上,从而提高了空间分辨率。

    Method and apparatus for measuring electrical properties in torsional resonance mode
    6.
    发明授权
    Method and apparatus for measuring electrical properties in torsional resonance mode 有权
    用于测量扭转共振模式下电气特性的方法和装置

    公开(公告)号:US07757544B2

    公开(公告)日:2010-07-20

    申请号:US11619097

    申请日:2007-01-02

    Abstract: The preferred embodiments are directed to a method and apparatus of operating a scanning probe microscope (SPM) including oscillating a probe of the SPM at a torsional resonance of the probe, and generally simultaneously measuring an electrical property, e.g., a current, capacitance, impedance, etc., between a probe of the SPM and a sample at a separation controlled by the torsional resonance mode. Preferably, the measuring step is performed while using torsional resonance feedback to maintain a set-point of SPM operation.

    Abstract translation: 优选实施例涉及一种操作扫描探针显微镜(SPM)的方法和装置,包括在探针的扭转共振下振荡SPM的探针,并且通常同时测量电特性,例如电流,电容,阻抗 等等,在SPM的探针和由扭转共振模式控制的分离的样品之间。 优选地,在使用扭转共振反馈以维持SPM操作的设定点的同时执行测量步骤。

    METHOD FOR DETERMINING A DOPANT CONCENTRATION IN A SEMICONDUCTOR SAMPLE
    8.
    发明申请
    METHOD FOR DETERMINING A DOPANT CONCENTRATION IN A SEMICONDUCTOR SAMPLE 有权
    用于确定半导体样品中浓度浓度的方法

    公开(公告)号:US20090100554A1

    公开(公告)日:2009-04-16

    申请号:US12281806

    申请日:2007-02-28

    CPC classification number: G01Q60/30 G01Q60/32 G01Q60/40

    Abstract: A method is described for determining a dopant concentration on a surface and/or in layer region lying close to the surface of a semiconductor sample using an atomic force microscope, whose leaf-spring tip is brought into contact with the semiconductor sample, forming a Schottky barrier, wherein an electric alternating potential is applied between the spring-leaf tip and the semiconductor sample in the region of the Schottky barrier in such a way that a space charge region inside the semiconductor sample defining the three-dimensional extension of the Schottky barrier is excited and begins to oscillate within the confines of its spatial extension, said oscillations are transmitted to the leaf-spring, are detected and form the basis for determining the dopant concentration.

    Abstract translation: 描述了一种用于使用原子力显微镜确定在靠近半导体样品的表面的表面和/或层的区域中的掺杂剂浓度的方法,所述原子力显微镜的板簧尖与半导体样品接触,形成肖特基 阻挡层,其中在所述肖特基势垒区域中的所述弹簧叶尖和所述半导体样品之间施加电交替电位,使得限定所述肖特基势垒的三维延伸的所述半导体样品内的空间电荷区域为 激发并在其空间延伸的范围内开始振荡,所述振荡被传输到板簧,被检测并形成用于确定掺杂剂浓度的基础。

    Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having the semiconductor probe
    9.
    发明申请
    Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having the semiconductor probe 失效
    具有电阻端头的半导体探针及其制造方法,信息记录装置,信息再现装置以及具有半导体探针的信息测量装置

    公开(公告)号:US20070020938A1

    公开(公告)日:2007-01-25

    申请号:US11527492

    申请日:2006-09-27

    Abstract: Provided are a semiconductor probe having a resistive tip, a method of fabricating the semiconductor probe, and a method of recording and reproducing information using the semiconductor probe. The semiconductor probe includes a tip and a cantilever. The tip is doped with first impurities. The cantilever has an end portion on which the tip is positioned. The tip includes a resistive area, and first and second semiconductor electrode areas. The resistive area is positioned at the peak of the tip and lightly doped with second impurities that are different from the first impurities. The first and second semiconductor electrode areas are heavily doped with the second impurities and contact the resistive area.

    Abstract translation: 提供了具有电阻尖端的半导体探针,制造半导体探针的方法以及使用半导体探针记录和再现信息的方法。 半导体探头包括尖端和悬臂。 尖端掺杂有第一杂质。 悬臂具有尖端位于其上的端部。 尖端包括电阻区域,以及第一和第二半导体电极区域。 电阻区域位于尖端的峰顶处,并且轻掺杂有与第一杂质不同的第二杂质。 第一和第二半导体电极区域被第二杂质重掺杂并接触电阻区域。

    Method and apparatus for measuring electrical properties in torsional resonance mode
    10.
    发明授权
    Method and apparatus for measuring electrical properties in torsional resonance mode 有权
    用于测量扭转共振模式下电气特性的方法和装置

    公开(公告)号:US07155964B2

    公开(公告)日:2007-01-02

    申请号:US11133802

    申请日:2005-05-21

    Abstract: The preferred embodiments are directed to a method and apparatus of operating a scanning probe microscope (SPM) including oscillating a probe of the SPM at a torsional resonance of the probe, and generally simultaneously measuring an electrical property, e.g., a current, capacitance, impedance, etc., between a probe of the SPM and a sample at a separation controlled by the torsional resonance mode. Preferably, the measuring step is performed while using torsional resonance feedback to maintain a set-point of SPM operation.

    Abstract translation: 优选实施例涉及一种操作扫描探针显微镜(SPM)的方法和装置,包括在探针的扭转共振下振荡SPM的探针,并且通常同时测量电特性,例如电流,电容,阻抗 等等,在SPM的探针和由扭转共振模式控制的分离的样品之间。 优选地,在使用扭转共振反馈以维持SPM操作的设定点的同时执行测量步骤。

Patent Agency Ranking