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1.发明授权Method to incorporate non-volatile memory and logic components into a single sub-0.3 micron fabrication process for embedded non-volatile memory 失效将非易失性存储器和逻辑元件并入用于嵌入式非易失性存储器的单个次0.3微米制造工艺中的方法
公开(公告)号：US5723355A
公开(公告)日：1998-03-03
申请号：US785234
申请日：1997-01-17
申请人： Shang-De Ted Chang , Binh Ly
发明人： Shang-De Ted Chang , Binh Ly
IPC分类号： H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11526 , H01L27/11546 , H01L27/105
摘要： A semiconductor fabrication process allows for the fabrication of high-voltage transistors, logic transistors, and memory cells where, as required for sub-0.3 micron device geometries, the gate oxide of the logic transistors is thinner than the tunnel oxide thickness of the non-volatile memory cells without the undesirable contamination of the gate oxide of the logic transistors or contamination of the tunnel oxide of the memory cells. In one embodiment, the tunnel oxide of the memory cells is grown to a desired thickness. In a next step, a layer of doped polysilicon which will serve as the floating gate of the memory cell(s) is immediately deposited over the tunnel oxide of the memory cells, thereby protecting the tunnel oxide from contamination in subsequent masking and etching steps. The gate oxide of the logic transistors and the gate oxide of the high-voltage transistors are then grown to a desired thickness.
摘要翻译： 半导体制造工艺允许制造高压晶体管，逻辑晶体管和存储器单元，其中，如亚0.3微米器件几何形状所要求的，逻辑晶体管的栅极氧化物比非晶体管的隧道氧化物厚度薄， 非易失性存储单元，而不会对逻辑晶体管的栅极氧化物的不期望的污染或者存储单元的隧道氧化物的污染。 在一个实施例中，将存储器单元的隧道氧化物生长至期望的厚度。 在下一步骤中，将作为存储器单元的浮置栅极的掺杂多晶硅层立即沉积在存储器单元的隧道氧化物上，从而在随后的掩模和蚀刻步骤中保护隧道氧化物免受污染。 然后将逻辑晶体管的栅极氧化物和高电压晶体管的栅极氧化物生长至期望的厚度。
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公开(公告)号：US11295630B2
公开(公告)日：2022-04-05
申请号：US17428191
申请日：2020-03-07
申请人： Binh Ly
发明人： Binh Ly
摘要： A language learning assembly includes a body having at least one first recess and at least one second recess arranged parallel to the at least one first recess. A plurality of blocks are color-coded by syntax category or “parts of speech” and have a plurality of words displayed on each block. The blocks are sized to fit side-by-side within one of the at least one first recess and the at least one second recess to form grammatically correct sentences. Each block can have a different word on at least two faces thereof. Some of the blocks can be configured to display words in a fixed fashion. Some of the blocks can have electronic displays configured to display words electronically.
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