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公开(公告)号：US20230160951A1
公开(公告)日：2023-05-25
申请号：US17896336
申请日：2022-08-26
发明人： Cheng Wu , Shuqing Duan , Jinde Gao
CPC分类号： G01R31/2836 , H05K1/0268 , H05K3/00
摘要： The present application discloses a method for locating an open circuit failure point of a test structure, which includes the following steps: step 1: providing a sample formed with a test structure, a first metal layer pattern and a second metal layer pattern of the test structure forming a series resistor structure through each via; step 2: performing a first active voltage contrast test to the sample to show an open circuit point and making a first scratch mark at an adjacent position of the open circuit point; step 3: forming a coating mark at the first scratch mark on the sample; step 4: performing a second active voltage contrast test to the sample to show the open circuit point and locating a relative position of the open circuit point by using a position of the coating mark as a reference position.
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公开(公告)号：US11852674B2
公开(公告)日：2023-12-26
申请号：US17896336
申请日：2022-08-26
发明人： Cheng Wu , Shuqing Duan , Jinde Gao
CPC分类号： G01R31/2836 , H05K1/0268 , H05K3/00
摘要： The present application discloses a method for locating an open circuit failure point of a test structure, which includes the following steps: step 1: providing a sample formed with a test structure, a first metal layer pattern and a second metal layer pattern of the test structure forming a series resistor structure through each via; step 2: performing a first active voltage contrast test to the sample to show an open circuit point and making a first scratch mark at an adjacent position of the open circuit point; step 3: forming a coating mark at the first scratch mark on the sample; step 4: performing a second active voltage contrast test to the sample to show the open circuit point and locating a relative position of the open circuit point by using a position of the coating mark as a reference position.
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