-
公开(公告)号:US20220314220A1
公开(公告)日:2022-10-06
申请号:US17743794
申请日:2022-05-13
Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.
Inventor: Kaidi ZHANG , Boquan LIN , Yunfei BAI , Wei LI , Shun GONG , Linzhi WANG , Kerui XI
IPC: B01L3/00 , H03K17/725
Abstract: A driving circuit, a method for driving the same, and a microfluidic device are provided. The driving circuit includes a constant voltage writing module configured to transmit a constant voltage to an output terminal of the driving circuit, an AC voltage writing module configured to transmit an AC voltage to the output terminal of the driving circuit, a first switch, and a first capacitor. The first switch includes an input terminal electrically connected to a third signal line, an output terminal electrically connected to control terminals of the AC voltage writing module and the constant voltage writing module, and a control terminal electrically connected to a first scan line. The first capacitor is configured to stabilize a potential of the output terminal the first switch.
-
公开(公告)号:US20230418425A1
公开(公告)日:2023-12-28
申请号:US17956663
申请日:2022-09-29
Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.
Inventor: Shun GONG , Linzhi WANG , Kerui XI , Jiansheng ZHONG
CPC classification number: G06F3/0448 , G06V40/1306 , G06F3/0443 , G06F3/0446
Abstract: A sensing unit and a sensing device are provided. The sensing unit includes a substrate; a plurality of thin-film transistors and a plurality of sensing electrodes disposed on a side of the substrate; and a ring electrode disposed on a first electrode layer. The first electrode layer is located on a side of a thin-film transistor of the plurality of thin-film transistors away from the substrate. The plurality of sensing electrodes are disposed on the first electrode layer, and the ring electrode is disposed around the plurality of sensing electrodes.
-
公开(公告)号:US20250085253A1
公开(公告)日:2025-03-13
申请号:US18613167
申请日:2024-03-22
Applicant: Shanghai Tianma Micro-electronics Co., Ltd.
Inventor: Yukun HUANG , Shun GONG , Haotian LU , Linzhi WANG , Kaidi ZHANG , Baiquan LIN , Kerui XI , Feng QIN
IPC: G01N27/414 , B01L3/00
Abstract: A micro-fluidic detection device includes a first base plate, a second base plate opposite to the first base plate, and a droplet travel layer located between the first and second base plates. The first base plate includes a first substrate, a drive array layer, a first electrode layer, and a first hydrophobic layer. The second base plate includes a second substrate, a second electrode layer, and a second hydrophobic layer. Drive electrodes of the first electrode layer are at first units. The first unit includes a micro-fluidic unit circuit. A second unit includes a detection unit circuit. The detection unit circuit includes inorganic transistors and organic transistors. A sensitive electrode is at the second unit. The sensitive electrode is on a side of a layer where the inorganic transistor is located away from the first substrate. A first hollow hole of the first base plate exposes the sensitive electrode.
-
公开(公告)号:US20240128283A1
公开(公告)日:2024-04-18
申请号:US18090202
申请日:2022-12-28
Applicant: Shanghai Tianma Micro-electronics Co., Ltd.
Inventor: Haotian LU , Linzhi WANG , Baiquan LIN , Kerui XI , Shun GONG , Yukun HUANG , Fan XU , Kaidi ZHANG
IPC: H01L27/146 , G01N21/64
CPC classification number: H01L27/14603 , G01N21/645 , G01N21/6428
Abstract: A detection substrate including a substrate and a plurality of detection units disposed on a side of the substrate, each detection unit including at least an inorganic transistor, an organic transistor, and a photoelectric sensor element, the organic transistor including an organic semiconductor part, in a direction perpendicular to a plane of the substrate, a film layer where the organic semiconductor part is located being located on the side of the film layer where the inorganic transistor is located away from the substrate, the film layer where the organic semiconductor part is located being located on the side of a film layer where the photoelectric sensor element is located away from the substrate, the organic transistor of the detection unit being connected to a sensing electrode, the sensing electrode being located on the side of the film layer where the inorganic transistor is located away from the substrate.
-
-
-