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公开(公告)号：US08664706B2
公开(公告)日：2014-03-04
申请号：US13528250
申请日：2012-06-20
CPC分类号： H01L21/28273 , H01L27/11206 , H01L27/11233 , H01L29/66825 , H01L29/7885
摘要： A method of fabricating a one-time programmable (OTP) memory cell with improved read current in one of its programmed states, and a memory cell so fabricated. The OTP memory cell is constructed with trench isolation structures on its sides. After trench etch, and prior to filling the isolation trenches with dielectric material, a fluorine implant is performed into the trench surfaces. The implant may be normal to the device surface or at an angle from the normal. Completion of the cell transistor to form a floating-gate metal-oxide-semiconductor (MOS) transistor is then carried out. Improved on-state current (Ion) results from the fluorine implant.
摘要翻译： 一种在其编程状态之一制造具有改进的读取电流的一次可编程（OTP）存储单元的方法，以及如此制造的存储单元。 OTP存储单元的侧面由沟槽隔离结构构成。 在沟槽蚀刻之后，并且在用介电材料填充隔离沟槽之前，在沟槽表面中执行氟注入。 植入物可能垂直于装置表面或与法线成一角度。 然后完成单元晶体管以形成浮栅金属氧化物半导体（MOS）晶体管。 来自氟植入物的改进的导通电流（Ion）。
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公开(公告)号：US08679929B2
公开(公告)日：2014-03-25
申请号：US13312304
申请日：2011-12-06
IPC分类号： H01L21/336 , H01L21/425
CPC分类号： H01L21/28273 , H01L27/11206 , H01L27/11233 , H01L29/66825 , H01L29/7885
摘要： A method of fabricating a one-time programmable (OTP) memory cell with improved read current in one of its programmed states, and a memory cell so fabricated. The OTP memory cell is constructed with trench isolation structures on its sides. After trench etch, and prior to filling the isolation trenches with dielectric material, a fluorine implant is performed into the trench surfaces. The implant may be normal to the device surface or at an angle from the normal. Completion of the cell transistor to form a floating-gate metal-oxide-semiconductor (MOS) transistor is then carried out. Improved on-state current (Ion) results from the fluorine implant.
摘要翻译： 一种在其编程状态之一制造具有改进的读取电流的一次性可编程（OTP）存储单元的方法，以及如此制造的存储单元。 OTP存储单元的侧面由沟槽隔离结构构成。 在沟槽蚀刻之后，并且在用介电材料填充隔离沟槽之前，在沟槽表面中执行氟注入。 植入物可能垂直于装置表面或与法线成一角度。 然后完成单元晶体管以形成浮栅金属氧化物半导体（MOS）晶体管。 来自氟植入物的改进的导通电流（Ion）。
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公开(公告)号：US20130143375A1
公开(公告)日：2013-06-06
申请号：US13312304
申请日：2011-12-06
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , H01L27/11206 , H01L27/11233 , H01L29/66825 , H01L29/7885
摘要： A method of fabricating a one-time programmable (OTP) memory cell with improved read current in one of its programmed states, and a memory cell so fabricated. The OTP memory cell is constructed with trench isolation structures on its sides. After trench etch, and prior to filling the isolation trenches with dielectric material, a fluorine implant is performed into the trench surfaces. The implant may be normal to the device surface or at an angle from the normal. Completion of the cell transistor to form a floating-gate metal-oxide-semiconductor (MOS) transistor is then carried out. Improved on-state current (Ion) results from the fluorine implant.
摘要翻译： 一种在其编程状态之一制造具有改进的读取电流的一次可编程（OTP）存储单元的方法，以及如此制造的存储器单元。 OTP存储单元的侧面由沟槽隔离结构构成。 在沟槽蚀刻之后，并且在用介电材料填充隔离沟槽之前，在沟槽表面中执行氟注入。 植入物可能垂直于装置表面或与法线成一角度。 然后完成单元晶体管以形成浮栅金属氧化物半导体（MOS）晶体管。 来自氟植入物的改进的导通电流（Ion）。
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公开(公告)号：US20130143376A1
公开(公告)日：2013-06-06
申请号：US13528250
申请日：2012-06-20
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , H01L27/11206 , H01L27/11233 , H01L29/66825 , H01L29/7885
摘要： A method of fabricating a one-time programmable (OTP) memory cell with improved read current in one of its programmed states, and a memory cell so fabricated. The OTP memory cell is constructed with trench isolation structures on its sides. After trench etch, and prior to filling the isolation trenches with dielectric material, a fluorine implant is performed into the trench surfaces. The implant may be normal to the device surface or at an angle from the normal. Completion of the cell transistor to form a floating-gate metal-oxide-semiconductor (MOS) transistor is then carried out. Improved on-state current (Ion) results from the fluorine implant.
摘要翻译： 一种在其编程状态之一制造具有改进的读取电流的一次可编程（OTP）存储单元的方法，以及如此制造的存储单元。 OTP存储单元的侧面由沟槽隔离结构构成。 在沟槽蚀刻之后，并且在用介电材料填充隔离沟槽之前，在沟槽表面中执行氟注入。 植入物可能垂直于装置表面或与法线成一角度。 然后完成单元晶体管以形成浮栅金属氧化物半导体（MOS）晶体管。 来自氟植入物的改进的导通电流（Ion）。
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