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1.
公开(公告)号:US20240150649A1
公开(公告)日:2024-05-09
申请号:US18284182
申请日:2021-03-31
Applicant: Sharp Kabushiki Kaisha , TOPPAN INC.
Inventor: Kazuki GOTO , Yusuke SAKAKIBARA , Masaki YAMAMOTO , Tatsuya RYOHWA , Akio MISHIMA , Soichiro NIKATA , Vit KALOUSEK , Yuko OGURA , Yoko MICHIWAKI
CPC classification number: C09K11/88 , C09K11/0811 , C09K11/58 , C09K11/621
Abstract: A light-emitting element includes an anode electrode, a QD layer containing QDs, and a cathode electrode, in which the QDs are Cd-free quantum dots having a core-shell structure including a core containing at least Ag, Ga, and at least one of S and Se, and a shell containing at least Zn, and exhibit fluorescence characteristics with a fluorescence full-width at half-maximum of 40 nm or less and a fluorescence quantum yield percentage of 70% or more.
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公开(公告)号:US20240107792A1
公开(公告)日:2024-03-28
申请号:US18276026
申请日:2021-02-18
Applicant: SHARP KABUSHIKI KAISHA , NS Materials Inc.
Inventor: Kazuki GOTO , YUSUKE SAKAKIBARA , Yuma YAGUCHI , Keisuke KITANO , Masaki YAMAMOTO , Soichiro NIKATA , Yoko MICHIWAKI , Yuko OGURA , Vit KALOUSEK , Akio MISHIMA
CPC classification number: H10K50/115 , C09K11/02 , C09K11/584 , C09K11/623 , C09K11/883 , H10K50/15 , H10K50/16 , H10K2102/351
Abstract: A light-emitting element includes an anode electrode, a cathode electrode, and a QD layer provided between the anode electrode and the cathode electrode, the QD layer containing the QDs. The QDs are AgInxGa1-xSySe1-y-based or ZnAgInxGa1-xSySe1-y-based Cd-free QDs (0≤x
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