-
1.发明公开公开(公告)号：US20240318074A1
公开(公告)日：2024-09-26
申请号：US18496793
申请日：2023-10-27
发明人： Youngsik Kim , Sungjae Kim , Seungwon Park , Bitna Yoon , Donghee Lee , Junehyuk Jung
IPC分类号： C09K11/62 , C09K11/58 , H10K50/115
CPC分类号： C09K11/621 , C09K11/582 , H10K50/115
摘要： A quantum dot including a core represented by Formula 1, a method of manufacturing the quantum dot, and a light-emitting device and an apparatus including the quantum dot are provided:
M1aM2bM3cM4dM5e, Formula 1
wherein M1 is a Group I metal element, M2 and M3 are each independently a Group III metal element, and M4 and M5 are each independently a Group VI element; and a is 0.05 to 0.60, b is 0 to 1.4, c is 0 to 1.4, d is 0 to 2.0, and e is 0 to 2.0.-
公开(公告)号：US20240124771A1
公开(公告)日：2024-04-18
申请号：US18464970
申请日：2023-09-11
CPC分类号： C09K11/621 , C09K11/02 , C09K11/06
摘要： A quantum dot according to one or more embodiments includes: a core; a shell around the core; and a first passivation layer and a second passivation layer around the shell, wherein the first passivation layer includes a metal oxide, the second passivation layer includes a compound represented by K′(OA′)n, and K′ is one selected from among In, Zn, Ga, Mg, while n is 2 or 3. A′ is selected from among Ac, H, i-Pr (isopropyl), and Bu (butyl).
-
公开(公告)号：US20240059921A1
公开(公告)日：2024-02-22
申请号：US18306029
申请日：2023-04-24
发明人： Soodong Kim , Sujin Kim
IPC分类号： C09D11/50 , C09C1/36 , C09C3/06 , C09C3/08 , C09C3/00 , C09D11/322 , C09D11/037 , C09D11/107 , C09K11/62 , H10K59/38 , H10K59/80
CPC分类号： C09D11/50 , C09C1/3661 , C09C1/3669 , C09C1/3692 , C09C3/066 , C09C3/08 , C09C3/006 , C09D11/322 , C09D11/037 , C09D11/107 , C09K11/621 , H10K59/38 , H10K59/877 , C01P2004/80 , C01P2004/62 , C01P2006/60 , B82Y20/00
摘要： A scattering particle includes a core and a shell, wherein the shell includes a first layer including a compound capable of reacting with oxygen and/or moisture, and a second layer including a compound decomposable by light and/or heat.
-
公开(公告)号：US11873436B2
公开(公告)日：2024-01-16
申请号：US17765226
申请日：2020-09-28
申请人： NS Materials Inc.
发明人： Toshiaki Shimasaki
CPC分类号： C09K11/881 , C01B19/002 , C09K11/025 , C09K11/582 , C09K11/621 , B82Y20/00 , B82Y40/00 , C01P2002/72 , C01P2004/04 , C01P2004/64
摘要： A quantum dot of the present invention is a nanocrystal represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) containing silver, indium, and chalcogen, in which a fluorescence wavelength is within a range of a near-infrared region of 700 to 1500 nm, a fluorescence full width at half maximum is 150 nm or less, and a fluorescence quantum yield is higher than 20%. In the present invention, an average particle diameter is preferably 1 nm or more and 15 nm or less. In addition, a method for producing a quantum dot of the present invention includes synthesizing a quantum dot represented by AgInE2 (E is at least one of tellurium, selenium, and sulfur) from a silver raw material, an indium raw material, and a chalcogenide raw material (chalcogenide is at least one of tellurium, selenium, and sulfur).
-
公开(公告)号：US11788003B2
公开(公告)日：2023-10-17
申请号：US17449255
申请日：2021-09-28
申请人： OSAKA UNIVERSITY , NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH System , NICHIA CORPORATION
发明人： Susumu Kuwabata , Taro Uematsu , Kazutaka Wajima , Tsukasa Torimoto , Tatsuya Kameyama , Daisuke Oyamatsu , Kenta Niki
IPC分类号： C09K11/62 , B01J13/02 , C09K11/02 , C09B67/02 , H01L33/50 , G02F1/13357 , B82Y30/00 , B82Y40/00 , G02F1/1335
CPC分类号： C09K11/621 , B01J13/02 , C09B67/0097 , C09K11/02 , B82Y30/00 , B82Y40/00 , G02F1/133614 , G02F1/133617 , H01L33/502 , Y10S977/774 , Y10S977/813 , Y10S977/892 , Y10S977/896 , Y10S977/95
摘要： A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.
-
公开(公告)号：US20230228889A1
公开(公告)日：2023-07-20
申请号：US18180184
申请日：2023-03-08
申请人： Hitachi Metals, Ltd.
CPC分类号： G01T1/2002 , C09K11/025 , C09K11/621 , G01T1/2012 , G01T1/2018
摘要： A scintillator structure includes a plurality of cells and a reflector covering the plurality of cells. Here, each of the plurality of cells includes a resin and a phosphor, and the phosphor contains gadolinium oxysulfide. A breaking strength of an interface between each of the plurality of cells and the reflector is 900 gf or more.
-
公开(公告)号：US20170190966A1
公开(公告)日：2017-07-06
申请号：US15463721
申请日：2017-03-20
发明人： Eun Joo JANG , Shin Ae JUN , Sung Hun LEE , Jong Jin PARK , Seong Jae CHOI , Tae Kyung AHN
CPC分类号： C09K11/025 , B82Y20/00 , B82Y30/00 , C09K11/565 , C09K11/62 , C09K11/621 , C09K11/64 , C09K11/661 , C09K11/70 , C09K11/7492 , C09K11/88 , C09K11/883 , C09K11/892 , C30B7/14 , C30B29/48 , F21V9/30 , G02B6/005 , G02F2001/133614 , H01L51/5012 , H01L51/502 , H01L51/504 , H05B33/14 , Y10T428/256
摘要： Disclosed herein is a method for preparing a multilayer of nanocrystals. The method comprises the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals.
-
公开(公告)号：US20160336490A1
公开(公告)日：2016-11-17
申请号：US15156242
申请日：2016-05-16
申请人： Weiwen Zhao , Kari Haley , Juanita N. Kurtin
发明人： Weiwen Zhao , Kari Haley , Juanita N. Kurtin
CPC分类号： C09K11/025 , C09K11/621 , C09K11/883 , H01L33/50
摘要： A method of fabricating a semiconductor structure comprises forming a quantum dot. An insulator layer of silica is then formed encapsulating the quantum dot to create a coated quantum dot, using a reverse micelle sol-gel reaction. In one embodiment, the reverse micelle sol-gel reaction includes dissolving the quantum dot in a first non-polar solvent to form a first solution, adding the first solution to a second solution having a surfactant dissolved in a second non-polar solvent; and adding sodium silicate, potassium silicate, or lithium silicate to the second solution.
摘要翻译： 制造半导体结构的方法包括形成量子点。 然后使用反胶束溶胶 - 凝胶反应形成封装量子点以产生涂覆的量子点的二氧化硅绝缘体层。 在一个实施方案中，反胶束溶胶 - 凝胶反应包括将量子点溶解在第一非极性溶剂中以形成第一溶液，将第一溶液加入到具有溶解在第二非极性溶剂中的表面活性剂的第二溶液中; 并向第二溶液中加入硅酸钠，硅酸钾或硅酸锂。
-
9.发明申请公开(公告)号：US20160200939A1
公开(公告)日：2016-07-14
申请号：US14613789
申请日：2015-02-04
发明人： So-Hye CHO , Seung Sang HWANG , Seung Yong LEE , Jong-Ku PARK , Kyung-Youl BAEK , Albert Sung Soo LEE
IPC分类号： C09D183/04 , C09K11/88 , H01L31/0216 , C09K11/77 , H01L31/055 , C09K11/06 , C09K11/62
CPC分类号： C09D183/04 , C08G77/14 , C09K11/02 , C09K11/06 , C09K11/565 , C09K11/621 , C09K11/623 , C09K11/7728 , C09K11/7743 , C09K11/883 , C09K11/886 , C09K2211/182 , C09K2211/188 , H01L31/02168 , H01L31/055 , Y02E10/52
摘要： The present invention relates to a coating composition having excellent wavelength conversion efficiency and a wavelength converting thin film/sheet prepared using the same. The coating composition of the present disclosure includes 1 to 60 wt % of polyorgano-silsesquioxane, 0.0001 to 30.0 wt % of a wavelength converting agent, and a solvent, and exhibits a transmittance of 70% or more as compared to that of an aqueous solution. A wavelength converting thin film/sheet prepared by using the coating composition has not only excellent photoluminescence, thermal resistance, and light-fastness, but also moisture and oxygen permeability is low, and the visible light transmittance thereof is 70% or more as compared to that of the air, and when patterning is added, the photoluminescence intensity of sheet is at least two-fold higher than that of a non-patterned sheet. Therefore, the coating composition of the present invention may be conveniently used in the preparation of a wavelength converting thin film/sheet, and feasibly applied to the preparation of a solar cell in an efficient manner.
摘要翻译： 本发明涉及具有优异的波长转换效率的涂料组合物和使用其制备的波长转换薄膜/片材。 本公开的涂料组合物包含1至60重量％的聚有机硅倍半氧烷，0.0001至30.0重量％的波长转换剂和溶剂，并且与水溶液相比，其透光率为70％以上 。 通过使用涂料组合物制备的波长转换薄膜/薄片不仅具有优异的光致发光性，耐热性和耐光性，而且透湿度也低，可见光透射率比70％以上，与 当加入图形时，片材的光致发光强度比未图案化片材的光致发光强度高至少两倍。 因此，本发明的涂料组合物可以方便地用于制备波长转换薄膜/片材，并且可有效地应用于太阳能电池的制备。
-
10.发明申请GROUP I-III-VI MATERIAL NANO-CRYSTALLINE CORE AND GROUP I-III-VI MATERIAL NANO-CRYSTALLINE SHELL PAIRING 有权I-III-VI族材料纳米晶核和I-III-VI族材料纳米晶体配对公开(公告)号：US20160027958A1
公开(公告)日：2016-01-28
申请号：US14877718
申请日：2015-10-07
CPC分类号： H01L33/005 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/582 , C09K11/621 , C09K11/881 , H01L33/06 , H01L33/26 , H01L33/502
摘要： Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core.
摘要翻译： 具有I-III-VI族材料纳米晶核的纳晶结晶核和纳米晶体壳对，以及制备具有I-III-VI族材料纳米晶核的纳米晶核和纳米晶体壳对的方法， 被描述。 在一个实例中，半导体结构包括由I-III-VI族半导体材料构成的纳米晶核。 由第二不同的I-III-VI族半导体材料组成的纳米晶体壳至少部分地包围纳米晶核。
-
-
-
-
-
-
-
-
-
搜索结果
122 条记录 (耗时 0.021 秒)
