公开(公告)号：US07754394B2

公开(公告)日：2010-07-13

申请号：US11559417

申请日：2006-11-14

申请人： Shaun B Crawford ,  Thomas B Faure ,  Cuc K Huynh ,  James P Levin

发明人： Shaun B Crawford ,  Thomas B Faure ,  Cuc K Huynh ,  James P Levin

IPC分类号： G03F1/00 ,  H01L21/00

CPC分类号： G03F1/54 ,  G03F1/30 ,  G03F1/80

摘要： Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.

摘要翻译： 提供了制造光掩模的方法，例如玻璃光掩模上的铬和相移光掩模。 选择性主铬蚀刻和制造工艺中的选择性铬过蚀刻提供了具有改进的图像质量的光掩模，并且在当前工艺流程和制造步骤中提供标称图像尺寸控制和光掩模上的图像尺寸均匀性。 选择性蚀刻工艺利用主蚀刻，其中抗蚀剂蚀刻选择性（去除的抗蚀剂去除量）比在蚀刻对于相对于铬层去除抗蚀剂层更有选择性的过蚀刻步骤中更高。 为了控制蚀刻选择性，可以调整蚀刻剂化学成分和/或蚀刻剂反应器硬件设置（功率，电压等）。