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    Grid structure for reducing current density in focussed ion beam
    2.
    发明授权
    Grid structure for reducing current density in focussed ion beam 失效
    用于降低聚焦离子束电流密度的栅格结构

    公开(公告)号：US5159170A

    公开(公告)日：1992-10-27

    申请号：US692105

    申请日：1991-04-26

    申请人： James P. Levin ,  Alfred Wagner

    发明人： James P. Levin ,  Alfred Wagner

    IPC分类号： H01J37/04 ,  B23K15/00 ,  B23K15/10 ,  H01J37/09 ,  H01J37/30 ,  H01L21/265

    CPC分类号： B23K15/00 ,  B23K15/10

    摘要： A transmission grid is disposed in a conventional focussed ion beam system which includes an ion beam source emitter or ion gun, electrodes to turn the ion beam off and on, a beam defining aperture and electrostatic lenses to focus the ion beam onto a target. The elements of the ion beam system are disposed in a chamber which is provided with an inlet port and an outlet port. Gas is introduced into chamber via the inlet port where it is ionized by the ion beam into an ion plasma to be used to deposit materials onto the target. The transmission grid, is interposed which is a fine mesh, passive element is located in the path of the ion beam and reduces the ion beam current density by a desired value. The transmission grid may be configured with a variety of different transmissions so the current density can be adjusted in different increments depending on the gas/type of deposition to be performed.

    摘要翻译： 传输网格设置在常规的聚焦离子束系统中，其包括离子束源发射器或离子枪，用于使离子束离开和导通的电极，限定孔径的光束和静电透镜以将离子束聚焦到靶上。 离子束系统的元件设置在设有入口和出口的腔室中。 通过入口将气体引入室中，其中离子束被离子束离子化成离子等离子体，以将材料沉积到靶上。 传输格栅插入是细网，无源元件位于离子束的路径中，并将离子束电流密度降低所需的值。 传输网格可以配置有各种不同的传输，因此根据要执行的沉积的气体/类型可以以不同的增量来调整电流密度。

    Method to etch chrome for photomask fabrication
    3.
    发明申请
    Method to etch chrome for photomask fabrication 失效
    蚀刻铬用于光掩模制​​造的方法

    公开(公告)号：US20080113275A1

    公开(公告)日：2008-05-15

    申请号：US11559417

    申请日：2006-11-14

    申请人： Shaun B. Crawford ,  Thomas B. Faure ,  Cuc K. Huynh ,  James P. Levin

    发明人： Shaun B. Crawford ,  Thomas B. Faure ,  Cuc K. Huynh ,  James P. Levin

    IPC分类号： G03F1/00

    CPC分类号： G03F1/54 ,  G03F1/30 ,  G03F1/80

    摘要： Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.

    摘要翻译： 提供了制造光掩模的方法，例如玻璃光掩模上的铬和相移光掩模。 选择性主铬蚀刻和制造工艺中的选择性铬过蚀刻提供了具有改进的图像质量的光掩模，并且在当前工艺流程和制造步骤中提供标称图像尺寸控制和光掩模上的图像尺寸均匀性。 选择性蚀刻工艺利用主蚀刻，其中抗蚀剂蚀刻选择性（去除的抗蚀剂去除量）比在蚀刻对于相对于铬层去除抗蚀剂层更有选择性的过蚀刻步骤中更高。 为了控制蚀刻选择性，可以调整蚀刻剂化学成分和/或蚀刻剂反应器硬件设置（功率，电压等）。

    EUVL mask structure and method of formation
    4.
    发明授权
    EUVL mask structure and method of formation 有权

    公开(公告)号：US06777137B2

    公开(公告)日：2004-08-17

    申请号：US10064401

    申请日：2002-07-10

    申请人： Emily E. Fisch ,  Louis M. Kindt ,  James P. Levin ,  Michael R. Schmidt ,  Carey T. Williams

    发明人： Emily E. Fisch ,  Louis M. Kindt ,  James P. Levin ,  Michael R. Schmidt ,  Carey T. Williams

    IPC分类号： G03F900

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/72

    摘要： An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially reflect EUV radiation incident thereon. The absorber layer is adapted to absorb essentially all of EUV radiation incident thereon. A mask pattern is formed in the absorber layer. Formation of the mask pattern in the absorber layer is accompanied by inadvertent formation of a defect in the absorber layer. The defect is subsequently repaired. The mask pattern may be extended into the first conductive layer and into the buffer layer in a substantially defect-free process that exposes a portion of the multilayer stack. A second conductive layer may be provided on the absorber layer, wherein the mask pattern is also formed in the second conductive layer.

    Gas delivery for ion beam deposition and etching
    5.
    发明授权
    Gas delivery for ion beam deposition and etching 失效
    气体输送用于离子束沉积和蚀刻

    公开(公告)号：US5149974A

    公开(公告)日：1992-09-22

    申请号：US605601

    申请日：1990-10-29

    申请人： Steven J. Kirch ,  James P. Levin ,  Alfred Wagner

    发明人： Steven J. Kirch ,  James P. Levin ,  Alfred Wagner

    IPC分类号： H01J27/00 ,  G01Q30/20 ,  H01J37/22 ,  H01J37/28 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/265 ,  H01L21/285 ,  H01L21/302 ,  H05H3/06

    CPC分类号： H01J37/3178 ,  H01J37/3005 ,  H01J37/3056

    摘要： An ion beam structure includes a gas container, such as a cylindrical can having first and second apertures through the center of the top and bottom walls respectively of the container such that a narrow ion beam is passed through the apertures and the center axis of the can and onto a target specimen such as a mask or chip or other article of manufacture disposed closely below the bottom of the can. The can may further include deflection means for applying voltages and/or magnetic fields to locations on the can (i.e., top, bottom, sides) to direct secondary charged particles such as electrons emitted from the specimen onto an electron detection means such that the structure functions as an imaging system. The electric and/or magnetic fields may be employed to increase the collection efficiency of the detector and thereby improve the quality of the image by increasing the signal to noise ratio. When the collected image produced by the secondary charged particles indicates that a repair or other modification be performed, a gas is introduced into the can from a gas reservoir via a tube. The gas, which contains first type particles (i.e. gold atom, tungsten atom, etc.) leaves the can via the bottom aperture and is adsorbed onto the nearby target specimen surface. The ion beam, containing second type particles (i.e. gallium ions) passes through the gas with minimum interaction and strikes the target specimen surface to decompose the adsorbed gas and the decomposed first type particles to provide the modification such as repair to the specimen (mask or chip) surface.

    Mask set mismatch
    6.
    发明授权
    Mask set mismatch 失效
    掩模集不匹配

    公开(公告)号：US4388386A

    公开(公告)日：1983-06-14

    申请号：US385591

    申请日：1982-06-07

    申请人： Bruce D. King ,  James P. Levin

    发明人： Bruce D. King ,  James P. Levin

    IPC分类号： G03F1/00 ,  G03F9/00 ,  G05D3/12 ,  H01L21/027 ,  H01L21/30 ,  H01L21/67 ,  H01L21/68 ,  G03C5/06

    CPC分类号： G03F9/7076 ,  G03F1/42 ,  G03F1/70

    摘要： A method for marking a mask set to insure minimum mismatch between the masks when they are assembled into a set. Each mask in the set is evaluated against a known fixed standard, identified and marked such that when the set is assembled and utilized to produce an integrated circuit minimum mismatch between each element in each mask in the set will be realized.

    摘要翻译： 用于标记掩模组的方法，以在掩模组装成一组时确保掩模之间的最小失配。 根据已知的固定标准评估集合中的每个掩模，识别和标记，使得当该组合被组合并用于产生集成电路时，将实现该集合中每个掩模中的每个元素之间的最小失配。

    Method to etch chrome for photomask fabrication
    7.
    发明授权
    Method to etch chrome for photomask fabrication 失效
    蚀刻铬用于光掩模制​​造的方法

    公开(公告)号：US07754394B2

    公开(公告)日：2010-07-13

    申请号：US11559417

    申请日：2006-11-14

    申请人： Shaun B Crawford ,  Thomas B Faure ,  Cuc K Huynh ,  James P Levin

    发明人： Shaun B Crawford ,  Thomas B Faure ,  Cuc K Huynh ,  James P Levin

    IPC分类号： G03F1/00 ,  H01L21/00

    CPC分类号： G03F1/54 ,  G03F1/30 ,  G03F1/80

    摘要： Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.

    摘要翻译： 提供了制造光掩模的方法，例如玻璃光掩模上的铬和相移光掩模。 选择性主铬蚀刻和制造工艺中的选择性铬过蚀刻提供了具有改进的图像质量的光掩模，并且在当前工艺流程和制造步骤中提供标称图像尺寸控制和光掩模上的图像尺寸均匀性。 选择性蚀刻工艺利用主蚀刻，其中抗蚀剂蚀刻选择性（去除的抗蚀剂去除量）比在蚀刻对于相对于铬层去除抗蚀剂层更有选择性的过蚀刻步骤中更高。 为了控制蚀刻选择性，可以调整蚀刻剂化学成分和/或蚀刻剂反应器硬件设置（功率，电压等）。