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1.发明申请公开(公告)号：US20180120369A1
公开(公告)日：2018-05-03
申请号：US15854835
申请日：2017-12-27
Inventor： Bo SUN , Xiaoling Zou
CPC classification number: G01R31/2607 , G01R27/02 , G01R31/26 , H01L51/0031 , H01L51/0545 , H01L51/0558 , H01L51/0566 , H01L51/105
Abstract: A TFT device for measuring a contact resistance and a measurement method for a contact resistance are disclosed. The TFT includes an active layer, a gate electrode and a gate insulation layer. The active layer includes a channel and at least three doping regions. Two of the at least three doping regions is connected through a channel. To measure the contact resistance, two of the at least three doping regions are selected and used as testing points for measuring. The gate electrode is disposed to correspond to the channel. The gate insulation layer insulatively isolates the active layer from the gate electrode. Excellent uniformity can be achieved so that manufacturing, film forming quality, and interface property show similarity to the maximum degree. Accordingly, measurement accuracy is increased, and distribution region can be saved to thereby increase utilization of an experimental region.
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2.发明授权公开(公告)号：US09970978B1
公开(公告)日：2018-05-15
申请号：US15854835
申请日：2017-12-27
Inventor： Bo Sun , Xiaoling Zou
CPC classification number: G01R31/2607 , G01R27/02 , G01R31/26 , H01L51/0031 , H01L51/0545 , H01L51/0558 , H01L51/0566 , H01L51/105
Abstract: A TFT device for measuring a contact resistance and a measurement method for a contact resistance are disclosed. The TFT includes an active layer, a gate electrode and a gate insulation layer. The active layer includes a channel and at least three doping regions. Two of the at least three doping regions is connected through a channel. To measure the contact resistance, two of the at least three doping regions are selected and used as testing points for measuring. The gate electrode is disposed to correspond to the channel. The gate insulation layer insulatively isolates the active layer from the gate electrode. Excellent uniformity can be achieved so that manufacturing, film forming quality, and interface property show similarity to the maximum degree. Accordingly, measurement accuracy is increased, and distribution region can be saved to thereby increase utilization of an experimental region.
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3.发明授权公开(公告)号：US09903904B2
公开(公告)日：2018-02-27
申请号：US14896741
申请日：2015-10-08
Inventor： Bo Sun , Xiaoling Zou
CPC classification number: G01R31/2607 , G01R27/02 , G01R31/26 , H01L51/0031 , H01L51/0545 , H01L51/0558 , H01L51/0566 , H01L51/105
Abstract: TFT device for measuring a contact resistance and measurement method for a contact resistance are disclosed. The TFT includes an active layer, a gate electrode and a gate insulation layer. The active layer includes a channel and at least three doping regions, wherein, two of the at least three doping regions is connected through a channel, when measuring the contact resistance, using two of the at least three doping regions as testing points for measuring. The gate electrode disposed correspondingly to the channel. The gate insulation layer for insulating the active layer from the gate electrode. The uniformity of the present invention is well, the manufacturing process, the film forming quality and the interface property are similar in a maximum degree. Accordingly, a measurement accuracy is increased, saving the distribution region at the same time, increasing the utilization of the experimental region.
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