摘要:
A pattern data verification method includes preparing exposure data related to a circuit pattern to be formed on a substrate, calculating a characteristic of an image of an exposure pattern on a resist film to be applied on the substrate, the exposure pattern corresponding to the exposure data, calculating a film thickness of the resist film after being developed based on the characteristic of the image of the exposure pattern, and determining whether the exposure data is acceptable or rejectable based on the film thickness of the resist film after being developed.
摘要:
A pattern data verification method includes preparing exposure data related to a circuit pattern to be formed on a substrate, calculating a characteristic of an image of an exposure pattern on a resist film to be applied on the substrate, the exposure pattern corresponding to the exposure data, calculating a film thickness of the resist film after being developed based on the characteristic of the image of the exposure pattern, and determining whether the exposure data is acceptable or rejectable based on the film thickness of the resist film after being developed.
摘要:
An image filing system has first and second image storage devices and a retrieval data storage device. Image data representing a plurality of images are stored in the first image storage device, and retrieval data corresponding to the image data are stored in the retrieval data storage device. Desired image data are specified according to the corresponding retrieval data, and retrieved from the first image storage device and outputted to the second erasable random-access image storage device. Link information which indicates other image data related to the specified image data is added to the retrieval data. When desired image data are specified according to the corresponding retrieval data and retrieved and outputted to the second image storage device, the other image data related to the desired identified image data can quickly and efficiently be retrieved according to the link information.
摘要:
An embodiment of the present invention is a charge trajectory calculating method which calculates, by simulation, trajectories of charges scattered by irradiating a target object with a charged beam. The method includes: setting a simulation region, which corresponds to the existence region of the target object; dividing the simulation region into a plurality of segment regions; calculating, by a Monte Carlo calculation, the trajectories of charges scattered by irradiating the inside of a predetermined segment region with the charged beam; calculating, based on function values of an approximate function, the potential distribution which occurs in the simulation region by irradiating the outside of the predetermined segment region with the charged beam; and calculating, by a Monte Carlo calculation, and based on the potential distribution calculated based on the function values of the approximate function, the trajectories of charges scattered by irradiating the outside of the predetermined segment region with the charged beam.
摘要:
A method of determining defect detection sensitivity data, comprises: taking image data from the desired surface areas of each of semiconductor devices, processing at least two of the image data through arithmetic operations and comparing the processed image data with a parameter of defect detection sensitivity substituted by predetermined threshold data to obtain information on defects in the desired areas at least in one-to-one correspondence with any of the image data arithmetically processed, repeating more than once the step of varying the parameter of the defect detection sensitivity to obtain the defect information, so as to obtain more than one sets of combination data on a value of the parameter of the defect detection sensitivity correlated with the defect information, processing more than one sets of the combination data to produce a mathematical function expressing a relation of the desired statistical data with the parameter of the defect detection sensitivity, the mathematical function being used to determine defect detection sensitivity data, the defect detection sensitivity data being used in obtaining the information on the defects in the desired surface areas of the semiconductor devices under defect inspection, and the defect detection sensitivity data defining an existence range of the defect information in the image data which are taken from the desired surface areas of each semiconductor device and which are arithmetically processed in the previous step.
摘要:
In one embodiment, a charge trajectory calculating method of calculating, by simulation, trajectories of charges scattered by irradiating a target object with a charged beam includes setting a simulation region, which corresponds to an existence region of the target object, and retrieving measured data of a potential distribution which occurs in the target object by irradiating the target object with the charged beam, from a storage location at which the measured data is stored. The method further includes setting the measured data retrieved from the storage location, as the potential distribution which occurs in the simulation region by irradiating the simulation region with the charged beam, and calculating, by a Monte Carlo calculation, the trajectories of charges scattered by irradiating the simulation region by the charged beam, on an assumption that the measured data retrieved from the storage location is set as the potential distribution in the simulation region.
摘要:
This apparatus selects a start-up mode of operation for controlling the compressor (1) at maximum speed only when the difference between the measured temperature of a room at the start of the operation and a target temperature is larger than a predetermined value. A normal mode of operation otherwise is selected for controlling the compressor (1) at a speed lower than maximum thus extending the life of the compressor (1).