公开(公告)号：US20130056846A1

公开(公告)日：2013-03-07

申请号：US13606710

申请日：2012-09-07

申请人： Shigetoshi TAKEDA

发明人： Shigetoshi TAKEDA

IPC分类号： H01L23/525 ,  H01L21/768

CPC分类号： H01L23/5256 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/768 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a first insulating film formed above a semiconductor substrate, a fuse formed above the first insulating film, a second insulating film formed above the first insulating film and the fuse and including an opening reaching the fuse, and a third insulating film formed above the second insulating film and in the opening.

公开(公告)号：US20080230874A1

公开(公告)日：2008-09-25

申请号：US12053903

申请日：2008-03-24

申请人： Tomoyuki YAMADA ,  Fumio USHIDA ,  Shigetoshi TAKEDA ,  Tomoharu AWAYA ,  Koji BANNO ,  Takayoshi MINAMI

发明人： Tomoyuki YAMADA ,  Fumio USHIDA ,  Shigetoshi TAKEDA ,  Tomoharu AWAYA ,  Koji BANNO ,  Takayoshi MINAMI

IPC分类号： H01L23/58 ,  H01L21/304

CPC分类号： H01L23/562 ,  H01L21/78 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.

摘要翻译： 设置在半导体基板上的半导体器件包括：包含元件的元件区域，围绕元件区域的防潮框架;设置在防潮框架和半导体器件的外周边缘之间以及半导体衬底上的绝缘层 ，沿着外周缘延伸并设置在绝缘层中的第一金属线和设置在绝缘层中的槽。