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公开(公告)号：US20090216677A1
公开(公告)日：2009-08-27
申请号：US12406582
申请日：2009-03-18
申请人： Shin-Hsien Kuo , Tsung-Hsun Tsai , Ying-Teng Chen , Jen-Shun Yang
发明人： Shin-Hsien Kuo , Tsung-Hsun Tsai , Ying-Teng Chen , Jen-Shun Yang
IPC分类号： G06Q40/00
摘要： A system for virtual capital operation over a network such as the internet includes a platform for a transaction between a first user and a second user of the system, a data processor for processing the flow of virtual currency occurred at the transaction between the first user and second user, and a trust company to allow real currency to be stored therein or withdrew therefrom in response to the flow of real currency occurred at the transaction, wherein the data processor generates an amount of virtual currency in response to an amount of real currency entrusted to the trust company.
摘要翻译： 用于通过诸如因特网的网络进行虚拟资本操作的系统包括用于系统的第一用户和第二用户之间的交易的平台，用于处理在第一用户与第一用户之间的交易处发生的虚拟货币流的数据处理器 第二用户和信托公司，以允许真实货币存储在其中或从交易中发生的真实货币流中撤回，其中数据处理器响应于委托的实际货币量产生一定量的虚拟货币 给信托公司。
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公开(公告)号：US20070061250A1
公开(公告)日：2007-03-15
申请号：US11227653
申请日：2005-09-15
申请人： Shin-Hsien Kuo , Tsung-Hsun Tsai , Ying-Teng Chen , Jen-Shun Yang
发明人： Shin-Hsien Kuo , Tsung-Hsun Tsai , Ying-Teng Chen , Jen-Shun Yang
IPC分类号： G06Q40/00
摘要： A system for virtual capital operation over a network such as the internet includes a platform for a transaction between a first user and a second user of the system, a data processor for processing the flow of virtual currency occurred at the transaction between the first user and second user, and a trust company to allow real currency to be stored therein or withdrew therefrom in response to the flow of real currency occurred at the transaction, wherein the data processor generates an amount of virtual currency in response to an amount of real currency entrusted to the trust company.
摘要翻译： 用于通过诸如因特网的网络进行虚拟资本操作的系统包括用于系统的第一用户和第二用户之间的交易的平台，用于处理在第一用户与第一用户之间的交易处发生的虚拟货币流的数据处理器 第二用户和信托公司，以允许真实货币存储在其中或从交易中发生的真实货币流中撤回，其中数据处理器响应于委托的实际货币量产生一定量的虚拟货币 给信托公司。
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公开(公告)号：US20130309845A1
公开(公告)日：2013-11-21
申请号：US13473699
申请日：2012-05-17
申请人： Tsung-Hsun Tsai
发明人： Tsung-Hsun Tsai
IPC分类号： B08B3/08 , H01L21/322
CPC分类号： H01L21/02057
摘要： A method of processing a substrate is provided. The method includes providing a substrate, performing a device forming process on the substrate, and cleaning the substrate. The step of cleaning the substrate includes cleaning the substrate with an atomic spray and rinsing the substrate with deionized water.
摘要翻译： 提供了一种处理衬底的方法。 该方法包括提供衬底，在衬底上执行器件形成工艺，以及清洁衬底。 清洁衬底的步骤包括用原子喷雾清洗衬底并用去离子水冲洗衬底。
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公开(公告)号：US07393797B2
公开(公告)日：2008-07-01
申请号：US11463302
申请日：2006-08-08
申请人： Tsung-Hsun Tsai
发明人： Tsung-Hsun Tsai
IPC分类号： H01L21/324
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： A method for thermal processing a semiconductor wafer is disclosed. A rapid thermal processing (RTP) chamber encompasses a heating means, a rotation means, and a cooling system for cooling walls of said RTP chamber. A semiconductor wafer is loaded into the RTP chamber just being cooling down to a first temperature by using the cooling system. When loading the semiconductor wafer, it has a temperature that is lower than the first temperature, thereby causing a tendency of particle deposition from the walls of the RTP chamber onto the semiconductor wafer. The semiconductor wafer is pre-heated to a second temperature higher than the first temperature with the heating means, thereby eliminating the tendency of particle deposition. Upon reaching the second temperature, the rotation means is activated to start to rotate the semiconductor wafer, while the semiconductor wafer being ramped up to a third temperature.
摘要翻译： 公开了半导体晶片的热处理方法。 快速热处理（RTP）室包括加热装置，旋转装置和用于冷却所述RTP室的壁的冷却系统。 通过使用冷却系统将半导体晶片装载到RTP室中，正在冷却至第一温度。 当加载半导体晶片时，其温度低于第一温度，从而导致从RTP室的壁向半导体晶片上的颗粒沉积的倾向。 利用加热装置将半导体晶片预热至高于第一温度的第二温度，从而消除了颗粒沉积的倾向。 当达到第二温度时，旋转装置被启动以开始旋转半导体晶片，同时半导体晶片被斜升至第三温度。
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公开(公告)号：US07321722B2
公开(公告)日：2008-01-22
申请号：US11160199
申请日：2005-06-13
申请人： Tsung-Hsun Tsai
发明人： Tsung-Hsun Tsai
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： A method for thermal processing a semiconductor wafer is disclosed. A rapid thermal processing (RTP) chamber encompasses a heating means, a rotation means, and a cooling system for cooling walls of said RTP chamber. A semiconductor wafer is loaded into the RTP chamber just being cooling down to a first temperature by using the cooling system. When loading the semiconductor wafer, it has a temperature that is lower than the first temperature, thereby causing a tendency of particle deposition from the walls of the RTP chamber onto the semiconductor wafer. The semiconductor wafer is pre-heated to a second temperature higher than the first temperature with the heating means, thereby eliminating the tendency of particle deposition. Upon reaching the second temperature, the rotation means is activated to start to rotate the semiconductor wafer, while the semiconductor wafer being ramped up to a third temperature.
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公开(公告)号：US20080105809A1
公开(公告)日：2008-05-08
申请号：US11593724
申请日：2006-11-07
申请人： Tsung-Hsun Tsai
发明人： Tsung-Hsun Tsai
IPC分类号： A47F5/08
CPC分类号： G02F1/133308 , G02F2001/133328
摘要： The present invention discloses a frame structure for mounting a liquid crystal display panel, and a frame with such structure is combined by a bonding technique, so that the assembled frame can provide enhanced bonding sides for supporting and mounting an LCD panel. The frame structure of this sort can avoid wasting raw materials and lower material costs significantly.
摘要翻译： 本发明公开了一种用于安装液晶显示面板的框架结构，并且通过接合技术将具有这种结构的框架组合在一起，使得组装的框架可以提供用于支撑和安装LCD面板的增强的接合侧。 这种框架结构可以避免浪费原材料，显着降低材料成本。
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公开(公告)号：US20060292895A1
公开(公告)日：2006-12-28
申请号：US11463302
申请日：2006-08-08
申请人： Tsung-Hsun Tsai
发明人： Tsung-Hsun Tsai
IPC分类号： H01L21/00
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： A method for thermal processing a semiconductor wafer is disclosed. A rapid thermal processing (RTP) chamber encompasses a heating means, a rotation means, and a cooling system for cooling walls of said RTP chamber. A semiconductor wafer is loaded into the RTP chamber just being cooling down to a first temperature by using the cooling system. When loading the semiconductor wafer, it has a temperature that is lower than the first temperature, thereby causing a tendency of particle deposition from the walls of the RTP chamber onto the semiconductor wafer. The semiconductor wafer is pre-heated to a second temperature higher than the first temperature with the heating means, thereby eliminating the tendency of particle deposition. Upon reaching the second temperature, the rotation means is activated to start to rotate the semiconductor wafer, while the semiconductor wafer being ramped up to a third temperature.
摘要翻译： 公开了半导体晶片的热处理方法。 快速热处理（RTP）室包括加热装置，旋转装置和用于冷却所述RTP室的壁的冷却系统。 通过使用冷却系统将半导体晶片装载到RTP室中，正在冷却至第一温度。 当加载半导体晶片时，其温度低于第一温度，从而导致从RTP室的壁向半导体晶片上的颗粒沉积的倾向。 利用加热装置将半导体晶片预热至高于第一温度的第二温度，从而消除了颗粒沉积的倾向。 当达到第二温度时，旋转装置被启动以开始旋转半导体晶片，同时半导体晶片被斜升至第三温度。
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公开(公告)号：US08652943B2
公开(公告)日：2014-02-18
申请号：US13473699
申请日：2012-05-17
申请人： Tsung-Hsun Tsai
发明人： Tsung-Hsun Tsai
IPC分类号： H01L21/322
CPC分类号： H01L21/02057
摘要： A method of processing a substrate is provided. The method includes providing a substrate, performing a device forming process on the substrate, and cleaning the substrate. The step of cleaning the substrate includes cleaning the substrate with an atomic spray and rinsing the substrate with deionized water.
摘要翻译： 提供了一种处理衬底的方法。 该方法包括提供衬底，在衬底上执行器件形成工艺，以及清洁衬底。 清洁衬底的步骤包括用原子喷雾清洗衬底并用去离子水冲洗衬底。
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9.发明申请METHOD OF FORMING A PIEZORESISTIVE DEVICE CAPABLE OF SELECTING STANDARDS AND METHOD OF FORMING A CIRCUIT LAYOUT CAPABLE OF SELECTING SUB-CIRCUIT LAYOUTS 审中-公开形成可选择标准的PIEZORESISTIVE设备的方法和形成可选择子电路的电路布局的方法公开(公告)号：US20070048889A1
公开(公告)日：2007-03-01
申请号：US11164331
申请日：2005-11-18
申请人： Hung-Yi Lin , Pin-Ting Liu , Tsung-Hsun Tsai
发明人： Hung-Yi Lin , Pin-Ting Liu , Tsung-Hsun Tsai
IPC分类号： H01L21/00
CPC分类号： G01L9/0042
摘要： A wafer is provided, and a circuit layout including a first piezoresistive device layout and a second piezoresistive device layout is formed on the front surface of the wafer. The first piezoresistive device layout includes a plurality of first nodes and the second piezoresistive device layout includes a plurality of second nodes. Subsequently, a dielectric layer is formed on the circuit layout, and the dielectric layer is patterned to expose either the first nodes or the second nodes. Thereafter, a connection pattern is formed on the dielectric layer to electrically connect the first nodes or the second nodes.
摘要翻译： 提供晶片，并且在晶片的前表面上形成包括第一压阻器件布局和第二压阻器件布局的电路布局。 第一压阻器件布局包括多个第一节点，并且第二压阻器件布局包括多个第二节点。 随后，在电路布局上形成电介质层，并对电介质层进行图案化以暴露第一节点或第二节点。 此后，在电介质层上形成连接图案以电连接第一节点或第二节点。
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公开(公告)号：US20060291831A1
公开(公告)日：2006-12-28
申请号：US11160199
申请日：2005-06-13
申请人： Tsung-Hsun Tsai
发明人： Tsung-Hsun Tsai
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： A method for thermal processing a semiconductor wafer is disclosed. A rapid thermal processing (RTP) chamber encompasses a heating means, a rotation means, and a cooling system for cooling walls of said RTP chamber. A semiconductor wafer is loaded into the RTP chamber just being cooling down to a first temperature by using the cooling system. When loading the semiconductor wafer, it has a temperature that is lower than the first temperature, thereby causing a tendency of particle deposition from the walls of the RTP chamber onto the semiconductor wafer. The semiconductor wafer is pre-heated to a second temperature higher than the first temperature with the heating means, thereby eliminating the tendency of particle deposition. Upon reaching the second temperature, the rotation means is activated to start to rotate the semiconductor wafer, while the semiconductor wafer being ramped up to a third temperature.
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